Narrow‐Band Green Phosphors for Advanced Display Technologies: Material Design, Performance Optimization, and Future Prospects

Abstract Narrow‐band green phosphor has become a key material for the realization of ultra‐high‐definition display technology due to its high color purity and narrow‐band emission characteristics. This review systematically explores the critical factors influencing the full width at half maximum (FWHM) of Eu²⁺‐activated phosphors. Examples are given to illustrate how the FWHM can be modulated by the position of the single luminescent center, the highly symmetric coordination environment, and the rigid structure. Subsequently, this review systematically reviews the performance characteristics of Eu²⁺‐doped nitride, oxynitride, and oxide systems of narrow‐band green phosphors. On this basis, the research progress of Mn²⁺‐doped phosphors is further discussed, aiming to provide an in‐depth analysis of the unique advantages and existing limitations of the materials in each system. This review summarises the use of narrow‐band green phosphors in Micro‐LEDs and laser displays, revealing their potential to extend the color gamut range and improve energy efficiency. Finally, given the current issues with narrow‐band green phosphors, such as wide FWHM, difficult particle size control, low luminescence efficiency, and poor stability, future research directions, such as submicron synthesis and structure design, are proposed.