Scalable Terahertz Room Temperature Photoreceivers Based on Large‐Area Hexagonal Boron Nitride and Graphene Heterostructures
Source abstract
Abstract
Abstract The development of scalable techniques for large‐area growth of layered materials unlocks technological opportunities for the implementation of devices and components suitable for on‐chip integration on photonic integrated platforms. Here, terahertz (THz) photoreceivers based on large‐area hexagonal boron nitride/single‐layer graphene (SLG)/hexagonal boron nitride heterostructures, prepared by chemical vapor deposition and realized by means of an industrially scalable method, are reported. The photo‐thermoelectric sensors are integrated on‐chip with planar antennas, on‐chip radio frequency circuitry, a low‐pass hammer‐head filter and coplanar strip lines, combining nanosecond response time and large sensitivity. Room temperature responsivities of ≈4 V W −1 , with noise equivalent power ≈4 nWHz −1/2 at high (2.86 THz) frequencies are reached, in a fully frequency‐scalable architecture. This paves the way for multiplexed hyperspectral THz cameras and optical communication systems.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Advanced Thermoelectric Materials and Devices · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
NEST CNR‐Istituto Nanoscienze and Scuola Normale Superiore Piazza San Silvestro 12 Pisa 56127 Italy
Cambridge Graphene Centre University of Cambridge Cambridge CB3 0FA UK
Funding
Engineering and Physical Sciences Research Council · H2020 European Research Council
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