journal article·2022-09

High‐Efficiency E‐Beam Pumped Deep‐Ultraviolet Surface Emitter Based on AlGaN Ultra‐Thin Staggered Quantum Wells

Yixin Wang, Ye Yuan, Renchun Tao, Shangfeng Liu, Tao Wang, Shanshan Sheng, Patrick Quach, Manoj Kumar CM, Zhaoying Chen, Fang Liu, Xin Rong, Peng Jin, Mengyang Feng, Hongwei Li, Shiping Guo, Weikun Ge, June Key Lee, Bo Shen, Xinqiang Wang

Advanced Optical Materials· Volume 10· Issue 18
Publisher page

Abstract

Abstract A 2‐inch wafer‐scale electron‐beam (e‐beam) pumped deep‐ultraviolet surface emitter (DUVSE) with high efficiency and high output power at an emission wavelength of 248 nm is reported. This DUVSE benefits from ultra‐thin staggered AlN/AlGaN/GaN multiple quantum wells (MQWs), which compromise the electron–hole overlap and carrier confinement and thus significantly improve the emission efficiency. The wall‐plug‐efficiency (WPE) is increased by six times to 5.25% in comparison to that of conventional DUV light‐emitting devices (LEDs) based on AlGaN MQWs. This WPE is achieved under an anode voltage and current of 8 kV and 1 mA, where the output power is 420 mW. This output power can be further enhanced to 702 mW by increasing the anode current to 3 mA. The enhanced WPE and uniform electron beam distribution lighten the avenue to achieve a wafer‐scale high power dense DUV light source, which is a challenge for conventional DUV‐LEDs, in particular with an emission wavelength of less than 250 nm.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Photocathodes and Microchannel Plates

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐optoelectronics School of Physics Peking University Beijing 100871 P. R. China

Songshan Lake Materials Laboratory Dongguan Guangdong 523808 P. R. China

Electron Microscopy Laboratory School of Physics Peking University Beijing 100871 P. R. China

Department of Materials Science and Engineering Chonnam National University Gwangju 61186 Republic of Korea

Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low‐dimensional Semiconductor Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China

Advanced Micro‐Fabrication Equipment Inc Shanghai 201201 P. R. China

Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China

Peking University Yangtze Delta Institute of Optoelectronics Nantong Jiangsu 226010 China

Funding

Natural Science Foundation of Beijing Municipality · National Natural Science Foundation of China

References (57)

Show source-provided references
1. 10.1088/1361-6463/aba64c10.1088/1361-6463/aba64c ↗
2. 10.7567/JJAP.53.10020910.7567/JJAP.53.100209 ↗
3. Kneissl M. · 2016 · 22710.1007/978-3-319-24100-5 ↗
4. 10.1038/s41566-019-0359-910.1038/s41566-019-0359-9 ↗
5. 10.1016/j.materresbull.2021.11125810.1016/j.materresbull.2021.111258 ↗
6. 10.7567/JJAP.55.08210110.7567/JJAP.55.082101 ↗
7. 10.1002/adfm.20200845210.1002/adfm.202008452 ↗
8. 10.1016/j.watres.2016.11.02410.1016/j.watres.2016.11.024 ↗
9. 10.1016/j.fmre.2021.11.00510.1016/j.fmre.2021.11.005 ↗
10. 10.7567/APEX.10.01580210.7567/APEX.10.015802 ↗
11. 10.1109/LPT.2018.282737110.1109/LPT.2018.2827371 ↗
12. 10.1088/1361-6641/ab7ce610.1088/1361-6641/ab7ce6 ↗
13. 10.1103/PhysRevB.79.12130810.1103/PhysRevB.79.121308 ↗
14. 10.1143/JJAP.51.02BJ1110.1143/JJAP.51.02BJ11 ↗
15. 10.7567/APEX.10.03100210.7567/APEX.10.031002 ↗
16. 10.1002/adom.20170139110.1002/adom.201701391 ↗
17. 10.1038/s41377-021-00503-y10.1038/s41377-021-00503-y ↗
18. 10.1002/pssc.20130027810.1002/pssc.201300278 ↗
19. 10.1143/APEX.5.08210110.1143/APEX.5.082101 ↗
20. 10.1002/adfm.20180239510.1002/adfm.201802395 ↗
21. 10.1002/adfm.20190544510.1002/adfm.201905445 ↗
22. 10.1039/D0TC04597G10.1039/D0TC04597G ↗
23. 10.1038/nphoton.2010.22010.1038/nphoton.2010.220 ↗
24. 10.1002/adma.20160099010.1002/adma.201600990 ↗
25. 10.1002/pssa.20143175610.1002/pssa.201431756 ↗
26. 10.3390/nano1110255310.3390/nano11102553 ↗
27. 10.1002/adom.20180176310.1002/adom.201801763 ↗
28. 10.1364/OE.42402710.1364/OE.424027 ↗
29. 10.1063/1.337383410.1063/1.3373834 ↗
30. 10.1088/0268-1242/29/8/08400810.1088/0268-1242/29/8/084008 ↗
31. 10.1002/adom.20190086010.1002/adom.201900860 ↗
32. 10.1063/1.497506810.1063/1.4975068 ↗
33. 10.1021/acs.nanolett.9b0351710.1021/acs.nanolett.9b03517 ↗
34. 10.1063/1.512482810.1063/1.5124828 ↗
35. 10.1063/1.499917510.1063/1.4999175 ↗
36. 10.3390/photonics704008710.3390/photonics7040087 ↗
37. 10.1063/1.500783510.1063/1.5007835 ↗
38. 10.1063/1.367166810.1063/1.3671668 ↗
39. 10.1063/1.358344210.1063/1.3583442 ↗
40. 10.1002/lpor.20120011810.1002/lpor.201200118 ↗
41. 10.1103/PhysRevApplied.10.06402710.1103/PhysRevApplied.10.064027 ↗
42. 10.1063/1.365133510.1063/1.3651335 ↗
43. 10.1063/1.497196810.1063/1.4971968 ↗
44. 10.1016/j.spmi.2018.04.01110.1016/j.spmi.2018.04.011 ↗
45. He L. F. · Appl. Phys. Express · 2019 · 12 · 6
46. 10.1109/TED.2018.288707410.1109/TED.2018.2887074 ↗
47. Kojima K. · Appl. Phys. Express · 2017 · 10
48. 10.1109/TED.2007.90287110.1109/TED.2007.902871 ↗
49. 10.1063/5.000361510.1063/5.0003615 ↗
50. 10.1103/PhysRevB.56.R1002410.1103/PhysRevB.56.R10024 ↗
51. 10.1016/j.spmi.2017.02.03510.1016/j.spmi.2017.02.035 ↗
52. 10.1016/j.spmi.2020.10649210.1016/j.spmi.2020.106492 ↗
53. 10.1002/adma.20160264510.1002/adma.201602645 ↗
54. 10.1039/C8TC04392B10.1039/C8TC04392B ↗
55. 10.1364/OE.20.00A70610.1364/OE.20.00A706 ↗
56. 10.1038/3509053910.1038/35090539 ↗
57. 10.3390/app808126410.3390/app8081264 ↗