Source abstract
Abstract
Abstract The high‐performance detector that operates at the low‐photon‐energy range (≈meV) of the electromagnetic spectrum at room temperature remains in urgent demand for application in a variety of important sectors, including 6G communications, security, sensing, medicine, space science, etc. The vast range of 2D‐layered nanomaterials and their distinct layer structures provide an ideal foundation for the manufacture of sophisticated photodetectors and detectors with convenient fabrication methods. In this paper, the direct detection of terahertz waveband dominated by the bolometer effect and photo‐thermoelectric effect is demonstrated, which is endowed with a versatile integration of 2H‐NbSe2 in terms of planar and vertical van der Waals structures. This 2H‐NbSe2‐based device can detect broadband long wavelength due to the bolometer effect, and the van der Waals heterostructure‐based device exhibits excellent sensitivity and self‐powered photo‐thermoelectric conversion with high responsivity (>735 V W−1), low response time (<1 µs), as well as low noise equivalent power (NEP < 50 pW Hz−0.5) at room temperature. The photodetector engineers versatile detection mechanisms, displaying low‐energy photons on the hybrid integration of novel low‐dimensional materials and providing an opportunity for the practical application of energy harvesting.
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Research context
OpenAlex topics: 2D Materials and Applications · Topological Materials and Phenomena · Advanced Thermoelectric Materials and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Optoelectronic Science and Engineering State Key Laboratory for Modification of Chemical Fibers and Polymer Materials DongHua University Shanghai 201620 China
State Key Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu‐tian Road 200083 Shanghai China
College of Physics and Optoelectronic Engineering Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences No. 1, Sub‐Lane Xiangshan, Xihu District Hangzhou 310024 China
The 50th Research Institute of China Electronics Technology Group Corporation 318 Chang‐he Road Shanghai 200331 China
Funding
Fundamental Research Funds for the Central Universities
References (37)
Show source-provided references
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