DataVXAdvanced Optical MaterialsPaper
journal article·2024-01Open access

Reducing Luminescence Intensity and Suppressing Irradiation‐induced Darkening of Bi4Ge3O12 by Ce‐doping for Radiation Detection

Yangmin Tang, Mingxue Deng, Qiunan Liu, Chengbin Kang, Xiang Li, Jiaqian Zheng, Kazu Suenaga, Zhenzhen Zhou, Junfeng Chen, Jiacheng Wang, Qian Liu

Advanced Optical Materials· Volume 12· Issue 2
Publisher pageOpen full text
Source abstract

Abstract

Abstract Due to its short radiation length, moderate light output (8000‐9000 photons/MeV), high density (7.13 g cm−3), and non‐hygroscopicity, etc., Bi4Ge3O12 (BGO) material has been widely utilized as an advanced scintillator for irradiation detection. However, pure BGO cannot meet the requirements for future physics experiments and state‐of‐art industrial facilities coupled with a silicon photomultiplier (SiPM) due to its slow response time, poor radiation resistance, and excessive light output. Herein, a Ce‐doping strategy is reported for efficiently improving the overall performance (e.g., irradiation resistance, decay time, radioluminescence, and light output) of BGO that can be expectedly applied in future high energy physics detection. Ce‐doped BGO (BGO:Ce) displays higher radiation resistance ability under 10 h UV irradiation (97% of original) and a faster fluorescence lifetime (269 ns), superior to pure BGO. Furthermore, BGO:Ce shows ≈30% luminescence intensity of pure BGO, well eliminating the oversaturation of SiPM coupled with scintillation detectors. Theoretical calculations imply that an intense competition between electron or hole traps and Ce ions (Ce3+, Ce4+) can effectively reduce the concentration of color centers, thus enhancing irradiation resistance ability.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Radiation Detection and Scintillator Technologies · Luminescence Properties of Advanced Materials · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

The State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Science Beijing 100049 China

Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 201899 China

The Institute of Scientific and Industrial Research (SAKNKEN) Osaka University Ibaraki 567‐0047 Japan

The State Key Laboratory of Advanced Displays and Optoelectronics Technologies Department of Electronics and Computer Engineering The Hong Kong University of Science and Technology Clear Water Bay Hong Kong 999077 China

Hebei Provincial Key Laboratory of Inorganic Nonmetallic Materials College of Materials Science and Engineering North China University of Science and Technology Tangshan 063210 China

School of Materials Science and Engineering Taizhou University Taizhou Zhejiang 318000 China

Funding

National Key Research and Development Program of China · Natural Science Foundation of Shanghai Municipality · Program of Shanghai Academic Research Leader · National Natural Science Foundation of China

References (46)

Show source-provided references
1. 10.1038/s42254-019-0047-110.1038/s42254-019-0047-1 ↗
2. 10.1103/PhysRevD.97.05500410.1103/PhysRevD.97.055004 ↗
3. c)L.Pezzotti H.Newman J.Freeman J.Hirschauer I. R.Ferrari G.Gaudio G.Polesello R.Santoro M.Lucchini S.Giagu 2022.
4. 10.1088/1748-0221/15/10/C1000610.1088/1748-0221/15/10/C10006 ↗
5. Zhao H. · J. Instrum. · 2018 · 1310.1088/1748-0221/13/03/P03010 ↗
6. Liu Y. · J. Instrum. · 2020 · 1510.1088/1748-0221/15/04/C04056 ↗
7. 10.3390/instruments603004010.3390/instruments6030040 ↗
8. 10.1111/jace.1876110.1111/jace.18761 ↗
9. Li L. · J. Instrum. · 2021 · 1610.1088/1748-0221/16/03/P03001 ↗
10. 10.1016/j.optmat.2022.11258510.1016/j.optmat.2022.112585 ↗
11. 10.1063/1.114710810.1063/1.1147108 ↗
12. 10.1016/j.nima.2022.16652710.1016/j.nima.2022.166527 ↗
13. 10.1016/j.ceramint.2021.01.02510.1016/j.ceramint.2021.01.025 ↗
14. 10.1016/0167-5087(83)91247-410.1016/0167-5087(83)91247-4 ↗
15. 10.1063/1.156381610.1063/1.1563816 ↗
16. 10.1007/s41365-022-01076-010.1007/s41365-022-01076-0 ↗
17. 10.1016/j.nima.2015.11.07010.1016/j.nima.2015.11.070 ↗
18. 10.1016/j.optmat.2022.11233010.1016/j.optmat.2022.112330 ↗
19. 10.1016/j.jallcom.2022.16383410.1016/j.jallcom.2022.163834 ↗
20. 10.1016/j.jallcom.2016.09.11510.1016/j.jallcom.2016.09.115 ↗
21. 10.1016/j.jnoncrysol.2017.01.00110.1016/j.jnoncrysol.2017.01.001 ↗
22. 10.1016/j.radmeas.2022.10677310.1016/j.radmeas.2022.106773 ↗
23. 10.1016/0168-9002(90)91362-F10.1016/0168-9002(90)91362-F ↗
24. Kim J. · J. Korean Phys. Soc. · 1998 · 32
25. 10.15541/jim2021080410.15541/jim20210804 ↗
26. 10.15541/jim2020026810.15541/jim20200268 ↗
27. 10.1016/j.ceramint.2022.03.20510.1016/j.ceramint.2022.03.205 ↗
28. 10.15541/jim2021024710.15541/jim20210247 ↗
29. 10.1039/C6TC05657A10.1039/C6TC05657A ↗
30. 10.1021/cg800842f10.1021/cg800842f ↗
31. 10.1021/acs.jpcc.8b0933810.1021/acs.jpcc.8b09338 ↗
32. 10.1039/c3tc31069h10.1039/c3tc31069h ↗
33. 10.1016/j.apmt.2022.10137610.1016/j.apmt.2022.101376 ↗
34. Tang Y. · Adv. Opt. Mater. · 2022
35. 10.1002/adom.20190199310.1002/adom.201901993 ↗
36. 10.1002/adom.20210228710.1002/adom.202102287 ↗
37. 10.1038/s41467-020-18119-y10.1038/s41467-020-18119-y ↗
38. 10.1016/j.jeurceramsoc.2022.11.02410.1016/j.jeurceramsoc.2022.11.024 ↗
39. 10.1111/jace.1886110.1111/jace.18861 ↗
40. 10.1007/s10948-020-05658-010.1007/s10948-020-05658-0 ↗
41. 10.1021/acsenergylett.0c0243010.1021/acsenergylett.0c02430 ↗
42. 10.1002/adma.20230200710.1002/adma.202302007 ↗
43. 10.1002/advs.20220699510.1002/advs.202206995 ↗
44. 10.35848/1347-4065/ac2a9010.35848/1347-4065/ac2a90 ↗
45. 10.1111/jace.1831810.1111/jace.18318 ↗
46. 10.1016/j.cej.2020.12480710.1016/j.cej.2020.124807 ↗