Multi‐Level Optical Switching by Amorphization in Single‐ and Multi‐Phase Change Material Structures
Source abstract
Abstract
Abstract The optical properties of phase‐change materials (PCMs) can be tuned to multiple levels by controlling the transition between their amorphous and crystalline phases. In multi‐material PCM structures, the number of discrete reflectance levels can be increased according to the number of PCM layers. However, the effect of increasing the number of layers on quenching and reversibility has not been thoroughly studied. In this work, the phase‐change physics and thermal conditions required for reversible switching of single and multi‐material PCM switches are discussed based on thermo‐optical phase‐change models and laser switching experiments. By using nanosecond laser pulses, 16 different reflectance levels in Ge2Sb2Te5 are demonstrated via amorphization. Furthermore, a multi‐material switch based on Ge2Sb2Te5 and GeTe with four discrete reflectance levels is experimentally proven with a reversible multi‐level response. The results and design principles presented herein will impact active photonics applications that rely on dynamic multi‐level operation, such as optical computing, beam steering, and next‐generation display technologies.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Nonlinear Optical Materials Studies · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Singapore University of Technology and Design (SUTD) 8 Somapah Rd Singapore 487372 Singapore
Center for Optics Research and Engineering Shandong University Qingdao 266237 P. R. China
School of Engineering University of Birmingham Birmingham B15 2TT UK
Funding
Agency for Science, Technology and Research
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