Electrically Pumped Whispering Gallery Mode Lasing from Au/ZnO Microwire Schottky Junction
Source abstract
Abstract
Au/ZnO microwire Schottky diodes are fabricated. The devices exhibit typical Schottky diode I–V behavior with a turn‐on voltage of about 0.72 V. The hexagonal ZnO microwires act as whispering gallery mode (WGM) lasing microcavities. Under forward bias, a three‐microwire device exhibits WGM ultraviolet lasing spectra with a quality factor of about 1287. Output power of the laser has been measured at various injection currents, indicating threshold behavior with a threshold current of about 59 mA. Due to limited hole injection in the operation of Schottky diode, the lasing is a result of an excitonic recombination within the WGM cavity.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Semiconductor Quantum Structures and Devices · Plasmonic and Surface Plasmon Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering University of California at Riverside Riverside CA 92521 USA
School of Materials Science and Engineering Jiangsu University Jiangsu 212013 China
Funding
U.S. Department of Energy · Office of Science · Basic Energy Sciences
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