Polarization‐Sensitive Ultraviolet Detection from Oriented‐CdSe@CdS‐Dot‐in‐Rods‐Integrated Silicon Photodetector
Source abstract
Abstract
Abstract Polarization can be used to distinguish artificial objects in complicated environments. The development of polarization‐sensitive detection at ultraviolet (UV) wavelengths has been substantially delayed by the difficulties in fabricating anisotropic materials and optical elements for polarization modulation. Polarization‐sensitive UV detection is developed by combining an electron‐multiplying charge‐coupled device (EMCCD) with a polarized luminescence downshifting material that benefits from an oriented‐CdSe@CdS‐dot‐in‐rods‐embedded polyvinylidene fluoride (PVDF) composite film. With mechanical‐stretching‐induced orientation, the composite film shows emission polarization with an optimized ratio up to 0.52 ± 0.02. This integrated detection system can respond to linearly polarized 405 nm light with a signal difference up to 23%, showing its potential for use in UV polarization‐enhanced imaging for object recognition.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · Quantum Dots Synthesis And Properties · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems School of Materials Science & Engineering Beijing Institute of Technology Haidian District Beijing 100081 P. R. China
East China Institute of Optoelectronic Integrated Device Suzhou 215163 P. R. China
School of Optics and Photonics Beijing Institute of Technology Haidian District Beijing 100081 P. R. China
Funding
National Natural Science Foundation of China
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