High‐Detectivity Green‐Selective All‐Polymer p–n Junction Photodetectors
Source abstract
Abstract
Abstract Currently available wavelength‐selective p–n junction organic photodetectors (OPDs) nearly exclusively use small molecules. In this study, green (G) selective all‐polymer p–n junction OPDs are developed by engineering the π‐conjugation networks and insulating properties of p‐ and n‐type polymers. Enhanced intermolecular ordering of p–n junction blend films compared to pristine polymer films results in superior hole/electron mobilities and low bimolecular recombination in the devices. Notably, similar G absorption ranges and the huge difference in their absorption coefficients between p‐ and n‐type polymers make excellent G selectivity in the p–n junction OPDs. Thus, narrow selectivity with a full width at half maximum of 155 nm toward green light and high detectivity of ≈1013 Jones are achieved in the all‐polymer p–n junction OPDs.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Organic Light-Emitting Diodes Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry Kookmin University 77 Jeongneung‐ro, Seongbuk‐gu Seoul 02707 Republic of Korea
Department of Energy Engineering Hanyang University 222 Wangsimni‐ro, Seongdong‐gu Seoul 04763 Republic of Korea
Department of Chemistry The Catholic University of Korea 43 jibong‐ro, Wonmi‐gu Bucheon‐si 14662 Republic of Korea
Pohang Accelerator Laboratory POSTECH Pohang 37673 Republic of Korea
Funding
National Research Foundation of Korea · Catholic University of Korea
References (33)
Show source-provided references
1. 10.1038/natrevmats.2016.10010.1038/natrevmats.2016.100 ↗
2. 10.1002/adma.20150540510.1002/adma.201505405 ↗
3. 10.1002/adom.20190205610.1002/adom.201902056 ↗
4. 10.1038/s41598-020-64565-510.1038/s41598-020-64565-5 ↗
5. 10.1002/adom.20180052210.1002/adom.201800522 ↗
6. 10.1002/adma.20150223810.1002/adma.201502238 ↗
7. 10.1002/adma.20190368710.1002/adma.201903687 ↗
8. 10.1002/adom.20170110810.1002/adom.201701108 ↗
9. K.Nishimura S.Shishido Y.Miyake M.Yanagida Y.Satou M.Shouho H.Kanehara R.Sakaida Y.Sato J.Hirase Y.Tomekawa Y.Abe H.Fujinaka Y.Matsunaga M.Murakami M.Harada Y.Inoue presented at 2018 IEEE Int. Solid‐State Circuits Conf. (ISSCC) San Francisco CA February2018.
10. 10.1038/srep0770810.1038/srep07708 ↗
11. 10.1038/ncomms1542110.1038/ncomms15421 ↗
12. 10.1021/acsphotonics.7b0124810.1021/acsphotonics.7b01248 ↗
13. Yoon S. · ACS Nano · 2019 · 13 · 2127
14. 10.1021/acsami.9b0832610.1021/acsami.9b08326 ↗
15. 10.1039/C9TC00722A10.1039/C9TC00722A ↗
16. 10.1038/ncomms734310.1038/ncomms7343 ↗
17. 10.1039/C5TC03567H10.1039/C5TC03567H ↗
18. 10.1039/c3tc30472h10.1039/c3tc30472h ↗
19. 10.1021/acsphotonics.9b0066910.1021/acsphotonics.9b00669 ↗
20. 10.1021/acsphotonics.7b0060710.1021/acsphotonics.7b00607 ↗
21. 10.1002/adom.20180134610.1002/adom.201801346 ↗
22. 10.1038/ncomms954710.1038/ncomms9547 ↗
23. 10.1002/anie.20180897610.1002/anie.201808976 ↗
24. 10.1021/acsmacrolett.8b0000910.1021/acsmacrolett.8b00009 ↗
25. 10.1039/C9PY00608G10.1039/C9PY00608G ↗
26. 10.1016/j.mattod.2018.02.00310.1016/j.mattod.2018.02.003 ↗
27. 10.1021/acsaem.0c0033110.1021/acsaem.0c00331 ↗
28. 10.1039/D0NJ01080D10.1039/D0NJ01080D ↗
29. 10.1021/j100798a03310.1021/j100798a033 ↗
30. 10.1038/s41566-018-0288-z10.1038/s41566-018-0288-z ↗
31. 10.1103/PhysRevLett.94.12660210.1103/PhysRevLett.94.126602 ↗
32. 10.1002/adfm.20030439910.1002/adfm.200304399 ↗
33. 10.1103/PhysRev.56.97810.1103/PhysRev.56.978 ↗