Novel Co‐Doped Y₂GeO₅:Pr³⁺,Tb³⁺: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points

Abstract Optical information storage (OIS) is considered as one of the most promising data storage methods due to unique advantages of high security, long life, and low‐energy consumption. Combination of optically stimulated luminescence of electron‐trapping materials (ETMs) and advanced optical technology has been proved to be a feasible approach to break through physical limitations of traditional storage technology. However, inorganic ETMs are limited to laboratory research, and have not realized the submicron recording point of “microscopic” analog optical storage so far. In this work, an exemplary application of OIS employing inorganic ETMs by a custom‐built optical system has been realized for the first time. Multidimensional triple traps are tailored through co‐doping of selective rare‐earth ions Tb³⁺ into Pr³⁺‐activated Y₂GeO₅. Furthermore, first principles calculations, combined with X‐ray photoelectron spectroscopy and low‐temperature electron spin resonance spectra, reveal the nature of trap levels. Remarkably, a {10 × 10} array of information points is automatically recorded in a bit‐by‐bit mode by a 515 nm femtosecond laser, then decoded by linear continuous scanning, and the emission spectrum between each two information points is detected to realize “0” and “1” in binary information. Hopefully, the present work can push forward practical application of inorganic ETMs in high‐density and super‐speed OIS.