Ultrahighly Efficient White Quantum Dot Light‐Emitting Diodes Operating at Low Voltage
Source abstract
Abstract
Abstract Achieving efficient white quantum dot light‐emitting diodes (WQLEDs) is highly desired because of their promising applications in general illumination and display backlight systems. Herein, a highly efficient WQLED with an extremely low input voltage is reported, which is fabricated via an all‐solution process by using an emitting layer with a mixture of red‐, blue‐, and green‐emitting quantum dots. When a facile strategy of light outcoupling with an optical lens is introduced, the device shows a maximum external quantum efficiency of 28.4%, which is the highest value reported so far. Moreover, the device exhibits a standard white emission with International Commission on Illumination (CIE) coordinates of (0.36, 0.34) at an extremely low input voltage of 3.2 V. This work provides a promising way for achieving high‐performance white quantum‐dot light‐emitting diodes with low driving voltage.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Nanocluster Synthesis and Applications · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Optoelectronic Technology Fuzhou University Fuzhou 350116 P. R. China
Fuzhou Superlattice Science and Technology Co. Ltd. Fuzhou 350116 P. R. China
Department of Electronic Engineering Hanyang University Seoul 133‐791 Republic of Korea
Funding
National Natural Science Foundation of China · National Basic Research Program of China · Natural Science Foundation of Fujian Province · National Research Foundation of Korea · Ministry of Education, Science and Technology
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