Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Photocathodes and Microchannel Plates
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Affiliations
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 P. R. China
Ioffe Institute Polytekhnicheskaya Str. 26 St. Petersburg 194021 Russia
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low‐dimensional Semiconductor Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
P. N. Lebedev Physical Institute Leninsky Ave. 53 Moscow 119991 Russia
MIREA Moscow Technological University Vernadsky Ave. 78 Moscow 119454 Russia
Department of Electrical and Electronic Engineering Mie University Mie 514‐8507 Japan
Advanced Micro‐Fabrication Equipment Inc. Shanghai 201201 P. R. China
Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China
Funding
NSAF Joint Fund · National Natural Science Foundation of China · Russian Foundation for Basic Research · Japan Society for the Promotion of Science · Japan Science and Technology Agency