Rare‐Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near‐Infrared Electroluminescence

Light-emitting devices based on MgxZn1-xO/ZnO:RE/Si heterostructures are proposed. Hot holes formed in MgxZn1-xO layers enter into ZnO:RE layers to impact-excite the RE3+ ions therein. From the devices using ZnO:RE (Eu, Er and Tm) films, electroluminescence in red, green, blue, and also optical-communication wavelengths are achieved. Such RE-related electroluminescence can be activated by extraordinarily low voltages of only several volts. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.