Low‐Stress Silicon Nitride Platform for Mid‐Infrared Broadband and Monolithically Integrated Microphotonics
Source abstract
Abstract
A monolithic Mid-IR microphotonics platform is demonstrated by engineered Si-rich and low-stress silicon nitride (SiNx) thin films. A measured optical transmission loss of < 0.2 dB cm-1 is achieved over a broad mid-IR spectrum. Using the SiNx film an efficient mid-IR directional coupler is developed that shows a high extinction ratio of 7 dB upon wavelength scanning (λ = 2.45–2.65 μm).
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Photonic and Optical Devices · Advanced Fiber Laser Technologies · Advanced Fiber Optic Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials Processing Center & Department of Materials Science and Engineering Massachusetts Institute of technology Cambridge, MA 02139 USA
Center for Nanoscale Systems Harvard University Cambridge, MA 02139 USA
J. A. Woollam Co., Inc Lincoln, NE 68508 USA
References (33)
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