High‐Performance Inkjet‐Printed Blue QLED Enabled by Crosslinked and Intertwined Hole Transport Layer
Source abstract
Abstract
Abstract A novel crosslinkable 4,4′‐(9,9‐dimethyl‐9H‐fluorene‐2,7‐diyl)bis(N‐phenyl‐N‐(4‐vinylphenyl)aniline) (FLTA‐V) based on TFB repeat unit is designed and synthesized. A blended film with optimized 2:1 weight ratio of TFB and FLTA‐V is employed to act as the effective hole transport layer (HTL) for quantum dot light‐emitting diode (QLED). The resulted HTL is crosslinked and exhibits excellent solvent‐resistant property without any initiators. It also forms a robust network structure and the TFB molecules are intertwined and imprisoned in the network. The HTL then becomes denser, which enhances both intermolecular interactions and π‐π stacking to further promote efficient charge transportation. Moreover, the closeness of highest occupied molecular orbital levels between TFB (−5.4 eV) and FLTA‐V (−5.6 eV) is beneficial for hole injection from HTL to QD layer. The increased surface energy of blended HTL ensures better electrical contact between HTL and QDs, which reduces the leakage current of the device. The combination of these favorable factors has led to the fabricated blue QLED showing a remarkable enhancement of external quantum efficiency (EQE) from 7.23% for the control TFB‐based device to 10.20% for blended HTL‐based device. In addition, a maximum of 6.82% of EQE for inkjet‐printed blue QLED has been achieved, which is the best‐reported high‐efficiency inkjet‐printed blue QLED to date.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Organic Light-Emitting Diodes Research · Nanocluster Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and Engineering Southeast University Nanjing 210096 China
Printable Electronics Research Center Nano Devices and Materials Division Suzhou Institute of Nano‐Tech and Nano‐Bionics Chinese Academy of Sciences Suzhou Jiangsu 215123 China
Funding
National Key Research and Development Program of China · China Postdoctoral Science Foundation · Natural Science Foundation of Jiangsu Province
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