DataVXAdvanced Optical MaterialsPaper
journal article·2022-11Open access

Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering

Dan Buca, Andjelika Bjelajac, Davide Spirito, Omar Concepción, Maksym Gromovyi, Emilie Sakat, Xavier Lafosse, Laurence Ferlazzo, Nils von den Driesch, Zoran Ikonic, Detlev Grützmacher, Giovanni Capellini, Moustafa El Kurdi

Advanced Optical Materials· Volume 10· Issue 22
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Source abstract

Abstract

Abstract The success of GeSn alloys as active material for infrared lasers could pave the way toward a monolithic technology that can be manufactured within mainstream silicon photonics. Nonetheless, for operation on chip, lasing should occur at room temperature or beyond. Unfortunately, despite the intense research in recent years, many hurdles have yet to be overcome. An approach exploiting strain engineering to induce large tensile strain in micro‐disk made of GeSn alloy with Sn content of 14 at% is presented here. This method enables robust multimode laser emission at room temperature. Furthermore, tensile strain enables proper valence band engineering; as a result, over a large range of operating temperatures, lower lasing thresholds are observed compared to high Sn content GeSn lasers operating at similar wavelength.
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Research context

Metals & alloys

OpenAlex topics: Photonic and Optical Devices · Advanced Fiber Optic Sensors · Advanced Fiber Laser Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Semiconductor Nanoelectronics Peter Grünberg Institute 9 (PGI 9) and JARA‐Fundamentals of Future Information Technologies Forschungszentrum Juelich 52428 Juelich Germany

CNRS C2N Université Paris‐Saclay 10 boulevard Thomas Gobert Palaiseau 91120 France

IHP ‐ Leibniz‐Institut für innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) Germany

Pollard Institute School of Electronic and Electrical Engineering University of Leeds Leeds LS2 9JT UK

Dipartimento di Scienze Università Roma Tre V.le G. Marconi 446 Rome I‐00146 Italy

Funding

Deutsche Forschungsgemeinschaft · Bundesministerium für Bildung und Forschung · Agence Nationale de la Recherche

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