journal article·2016-05

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Zhenyi Ni, Xiaodong Pi, Shu Zhou, Tomohiro Nozaki, Bruno Grandidier, Deren Yang

Advanced Optical Materials· Volume 4· Issue 5
Publisher page

Abstract

Hyperdoping silicon nanocrystals (Si NCs) is emerging as an effective means to obtain novel properties such as localized surface plasmon resonance (LSPR) from Si. Here it is shown that the physical properties and in particular the LSPR of boron (B)‐hyperdoped Si NCs significantly change as the NC size decreases from 6.8 to 2.4 nm. While the largest Si NCs undergo a stronger reduction of the average lattice spacing upon doping with respect to the smallest ones, they suffer much less from disorder and show LSPR over a wider range of B concentration. As a result, by taking advantage of the tunability of the NC size and doping level, the LSPR energy can be changed, making attractive the development of novel Si structures and devices based on B‐hyperdoped Si NCs.
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Research context

OpenAlex topics: Silicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang 310027 China

Department of Mechanical Science and Engineering Tokyo Institute of Technology Meguro Tokyo 152‐8550 Japan

Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN) CNRS UMR 8520, Département ISEN 41 bd Vauban 59046 Lille Cedex France

Funding

National Basic Research Program of China · National Nature Science Foundation of China

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