journal article·2020-01Open access

Designing High‐Performance LED Phosphors by Controlling the Phase Stability via a Heterovalent Substitution Strategy

Chen Cheng, Lixin Ning, Xiaoxing Ke, Maxim S. Molokeev, Zelin Wang, Guojun Zhou, Yu‐Chun Chuang, Zhiguo Xia

Advanced Optical Materials· Volume 8· Issue 2

Abstract

Abstract Phosphor‐converted white light‐emitting diodes (LEDs) are currently playing key roles in the lighting and display industries and trigger urgent demands for the discovery of “good” phosphors with high quantum efficiency, improved thermal stability, and controllable excitation/emission properties. Herein, a general and efficient heterovalent substitution strategy is demonstrated in K2HfSi3O9:Eu2+ achieved by Ln3+ (Ln = Gd, Tb, Dy, Tm, Yb, and Lu) doping to optimize luminescence properties, and as an example, the Lu3+ substitution leads to improvement of emission intensity and thermal stability, as well as tunable emission color from blue to cyan. The structural stability and Eu2+ occupation via Lu3+ doping have been revealed by the structural elaboration and density functional theory calculations, respectively. It is shown that heterovalent substitution allows predictive control of site preference of luminescent centers and therefore provides a new method to optimize the solid‐state phosphors for LEDs.
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Research context

OpenAlex topics: Luminescence Properties of Advanced Materials · Advanced Photocatalysis Techniques · Microwave Dielectric Ceramics Synthesis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

The Beijing Municipal Key Laboratory of New Energy Materials and Technologies School of Materials Sciences and Engineering University of Science and Technology Beijing Beijing 100083 P. R. China

Anhui Key Laboratory of Optoelectric Materials Science and Technology Key Laboratory of Functional Molecular Solids Ministry of Education Anhui Normal University Wuhu Anhui 241000 P. R. China

Institute of Microstructure and Property of Advanced Materials Beijing University of Technology Beijing 100124 P. R. China

Laboratory of Crystal Physics Kirensky Institute of Physics Federal Research Center KSC SB RAS Krasnoyarsk 660036 Russia

Department of Engineering Physics and Radioelectronics Siberian Federal University Krasnoyarsk 660041 Russia

Department of Physics Far Eastern State Transport University Khabarovsk 680021 Russia

National Synchrotron Radiation Research Center Hsinchu 300 Taiwan

State Key Laboratory of Luminescent Materials and Devices and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques South China University of Technology Guangzhou 510641 P. R. China

Funding

National Natural Science Foundation of China · Fundamental Research Funds for the Central Universities · Beijing Municipal Commission of Education

References (31)

Show source-provided references
1. 10.1126/science.110871210.1126/science.1108712 ↗
2. 10.1016/j.pmatsci.2016.09.00710.1016/j.pmatsci.2016.09.007 ↗
3. 10.1021/acs.chemrev.7b0028410.1021/acs.chemrev.7b00284 ↗
4. 10.1038/nmat427010.1038/nmat4270 ↗
5. 10.1021/acs.chemrev.5b0022310.1021/acs.chemrev.5b00223 ↗
6. 10.1126/sciadv.aav036310.1126/sciadv.aav0363 ↗
7. 10.1021/acs.chemmater.7b0460510.1021/acs.chemmater.7b04605 ↗
8. 10.1038/nmat484310.1038/nmat4843 ↗
9. 10.1016/j.joule.2018.01.01510.1016/j.joule.2018.01.015 ↗
10. 10.1039/C6DT01230B10.1039/C6DT01230B ↗
11. 10.1038/nmat401210.1038/nmat4012 ↗
12. 10.1002/adma.20180248910.1002/adma.201802489 ↗
13. 10.1002/anie.20180708710.1002/anie.201807087 ↗
14. 10.1021/acs.chemmater.7b0000610.1021/acs.chemmater.7b00006 ↗
15. 10.1038/lsa.2016.15510.1038/lsa.2016.155 ↗
16. 10.1021/jacs.8b0602110.1021/jacs.8b06021 ↗
17. 10.1021/jacs.5b1278810.1021/jacs.5b12788 ↗
18. 10.1039/C5TC01123J10.1039/C5TC01123J ↗
19. 10.1021/acsphotonics.8b0084410.1021/acsphotonics.8b00844 ↗
20. 10.1007/s00269-005-0017-210.1007/s00269-005-0017-2 ↗
21. 10.1002/ange.20190578710.1002/ange.201905787 ↗
22. 10.1107/S056773947600155110.1107/S0567739476001551 ↗
23. 10.1107/S056774087400456010.1107/S0567740874004560 ↗
24. 10.1088/0953-8984/15/27/31110.1088/0953-8984/15/27/311 ↗
25. 10.2150/jieij1980.83.2_8710.2150/jieij1980.83.2_87 ↗
26. 10.1364/OE.23.02870710.1364/OE.23.028707 ↗
27. 10.1103/PhysRevB.57.150510.1103/PhysRevB.57.1505 ↗
28. 10.1103/PhysRevB.89.15510510.1103/PhysRevB.89.155105 ↗
29. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
30. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
31. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗