An Electrochromic Phosphorescent Iridium(III) Complex for Information Recording, Encryption, and Decryption
Source abstract
Abstract
Electrical stimuli‐induced change in absorption spectra, or electrochromism, has been well studied due to its promising applications in displays, sensors, smart windows, memory chips, and electronic papers, etc. However, electrochromic luminescent materials are rather scarce. In view of their advantages including easy tuning of luminescence color, short response time, and relatively high contrast, an electrochromic phosphorescent Ir(III) complex (IrOH) with an OH moiety in the N^N ligand is designed. This complex displays long‐lived phosphorescence, whose wavelength and lifetime are very sensitive to complex concentration, pH value, and electric field. Based on the interesting electrochromic phosphorescence of complex IrOH, a quasi‐solid information recording and storage device has been designed. A short‐lived fluorescent dye has been selected to encrypt the recorded information. In view of the much longer lifetime of IrOH compared with that of the fluorescent dye, decryption has been accomplished by using time‐resolved imaging techniques. Hence, it is believed that electrochromic phosphorescence will open up a new and efficient avenue for applications in information encryption and decryption.
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Research context
OpenAlex topics: Organic Light-Emitting Diodes Research · Conducting polymers and applications · Luminescence and Fluorescent Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory for Organic Electronics & InformationDisplays and Institute of Advanced Materials (IAM) Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts and Telecommunications (NUPT) Nanjing 210023 P. R. China
Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM) Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (Nanjing Tech) Nanjing 211816 P. R. China
References (54)
Show source-provided references
1. 10.1021/cr900129a10.1021/cr900129a ↗
2. 10.1039/B612174H10.1039/B612174H ↗
3. 10.1002/adma.20130244710.1002/adma.201302447 ↗
4. 10.1889/1.362134510.1889/1.3621345 ↗
5. 10.1002/adfm.20130232010.1002/adfm.201302320 ↗
6. 10.1002/adfm.20130056910.1002/adfm.201300569 ↗
7. 10.1002/adfm.20060038110.1002/adfm.200600381 ↗
8. 10.1002/adma.20120021310.1002/adma.201200213 ↗
9. 10.1021/ja410778610.1021/ja4107786 ↗
10. 10.1039/c3sc51778k10.1039/c3sc51778k ↗
11. 10.1002/anie.20130225110.1002/anie.201302251 ↗
12. 10.1021/ja003693s10.1021/ja003693s ↗
13. 10.1039/c3tc31953a10.1039/c3tc31953a ↗
14. 10.1002/adma.20130478410.1002/adma.201304784 ↗
15. 10.1016/j.ccr.2009.01.01310.1016/j.ccr.2009.01.013 ↗
16. 10.1002/anie.20120147110.1002/anie.201201471 ↗
17. 10.1038/nmat190910.1038/nmat1909 ↗
18. 10.1021/ja074959z10.1021/ja074959z ↗
19. 10.1002/adfm.20100188410.1002/adfm.201001884 ↗
20. 10.1039/c0cs00114g10.1039/c0cs00114g ↗
21. 10.1039/c3ra00082f10.1039/c3ra00082f ↗
22. 10.1039/b915340c10.1039/b915340c ↗
23. 10.1016/j.ccr.2012.08.02310.1016/j.ccr.2012.08.023 ↗
24. 10.1002/ejic.20070118410.1002/ejic.200701184 ↗
25. 10.1039/c1jm00071c10.1039/c1jm00071c ↗
26. 10.1039/c2cc16993b10.1039/c2cc16993b ↗
27. 10.1039/c3cc48934e10.1039/c3cc48934e ↗
28. 10.1002/anie.20080560210.1002/anie.200805602 ↗
29. 10.1038/ncomms300910.1038/ncomms3009 ↗
30. 10.1039/c2cc15855h10.1039/c2cc15855h ↗
31. 10.1038/ncomms460110.1038/ncomms4601 ↗
32. 10.1002/anie.20130767210.1002/anie.201307672 ↗
33. 10.1016/S1011-1344(00)00070-110.1016/S1011-1344(00)00070-1 ↗
34. 10.1039/b412924p10.1039/b412924p ↗
35. 10.1073/pnas.080407110510.1073/pnas.0804071105 ↗
36. 10.1021/ja207163r10.1021/ja207163r ↗
37. 10.1002/adfm.20120238510.1002/adfm.201202385 ↗
38. 10.1002/adhm.20130027810.1002/adhm.201300278 ↗
39. 10.1021/ja044313w10.1021/ja044313w ↗
40. 10.1021/ja039727o10.1021/ja039727o ↗
41. 10.1002/anie.20039036010.1002/anie.200390360 ↗
42. 10.1016/S0010-8545(02)00041-310.1016/S0010-8545(02)00041-3 ↗
43. 10.1021/om700623j10.1021/om700623j ↗
44. 10.1021/ic800500c10.1021/ic800500c ↗
45. 10.1002/adma.20120151010.1002/adma.201201510 ↗
46. 10.1038/nmat202110.1038/nmat2021 ↗
47. 10.1021/ja02929410.1021/ja029294 ↗
48. 10.1021/cm021356810.1021/cm0213568 ↗
49. 10.1021/cr010338r10.1021/cr010338r ↗
50. 10.1021/jp206396v10.1021/jp206396v ↗
51. M. J.Frisch G. W.Trucks H. B.Schlegel G. E.Scuseria M. A.Robb J. R.Cheeseman G.Scalmani V.Barone B.Mennucci G. A.Petersson H.Nakatsuji M.Caricato X.Li H. P.Hratchian A. F.Izmaylov J.Bloino G.Zheng J. L.Sonnenberg M.Hada M.Ehara K.Toyota R.Fukuda J.Hasegawa M.Ishida T.Nakajima Y.Honda O.Kitao H.Nakai T.Vreven J. A.MontgomeryJr. J. E.Peralta F.Ogliaro M.Bearpark J. J.Heyd E.Brothers K. N.Kudin V. N.Staroverov R.Kobayashi J.Normand K.Raghavachari A.Rendell J. C.Burant S. S.Iyengar J.Tomasi M.Cossi N.Rega J. M.Millam M.Klene J. E.Knox J. B.Cross V.Bakken C.Adamo J.Jaramillo R.Gomperts R. E.Stratmann O.Yazyev A. J.Austin R.Cammi C.Pomelli J. W.Ochterski R. L.Martin K.Morokuma V. G.Zakrzewski G. A.Voth P.Salvador J. J.Dannenberg S.Dapprich A. D.Daniels Ö.Farkas J. B.Foresman J. V.Ortiz J.Cioslowski D. J.Fox Gaussian 09 Revision C.01 Gaussian Inc Wallingford CT2009.
52. 10.1071/CH980229110.1071/CH9802291 ↗
53. 10.1039/jr946000014710.1039/jr9460000147 ↗
54. 10.1021/jo01280a06410.1021/jo01280a064 ↗