Atomic Layer Deposition Films for Resistive Random‐Access Memories (Adv. Mater. Technol. 16/2024)

Atomic Layer Deposition Films Resistive random-access memory (RRAM) is a promising technology because of its ease of operation, high speed, affordability, and stability, particularly at nanoscale device sizes. In article number 2301762, Robert Zierold an o-workers show that atomic layer deposition is ideal for RRAM fabrication due to its ability to control oxygen vacancies and enables multiple-layer stacking, with potential applications in information storage and neural networks.