DataVXAdvanced Materials TechnologiesPaper
journal article·2023-01Open access

High‐Performance Nanostructured Flexible Capacitor by Plasma‐Induced Low‐Temperature Atomic Layer Annealing (Adv. Mater. Technol. 1/2023)

Jaehyeong Lee, Dohyun Go, Useung Lee, Seunghyeon Lee, Keun Hoi Kim, Jeong Woo Shin, Hyein Kim, Jong G. Ok, Jihwan An

Advanced Materials Technologies· Volume 8· Issue 1
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Source abstract

Abstract

Atomic Layer Annealing In article number 2201134, Jong G. Ok, Jihwan An, and co-workers demonstrate simple yet effective two-fold strategies to directly fabricate flexible thin film capacitors on polymer substrate: the crystallization of high-k TiO2 film by plasma-assisted atomic layer annealing at low temperature of 80 °C on nanostructured polycarbonate substrates fabricated by simple dynamic nanoinscribing technique, which results in the flexible capacitor of the record-high capacitance density (24.2 nF/mm2) with mechanical stability.
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Research context

PolymersNanomaterialsMaterials processing

OpenAlex topics: Semiconductor materials and devices · Dielectric materials and actuators · Advanced Sensor and Energy Harvesting Materials

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Affiliations

Department of Manufacturing Systems and Design Engineering Seoul National University of Science and Technology (SeoulTech) Gongneung‐ro 232, Nowon‐gu Seoul 01811 Republic of Korea

Department of Nano‐Bio Engineering Seoul National University of Science and Technology (SeoulTech) Gongneung‐ro 232, Nowon‐gu Seoul 01811 Republic of Korea

Department of Mechanical and Automotive Engineering Seoul National University of Science and Technology (SeoulTech) Gongneung‐ro 232, Nowon‐gu Seoul 01811 Republic of Korea

Department of New Energy Engineering Seoul National University of Science and Technology (SeoulTech) Gongneung‐ro 232, Nowon‐gu Seoul 01811 Republic of Korea

References

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