Observation of Controllable Negative Differential Resistance Behaviors through Morphology‐Dependent Zinc Oxide/p‐Si Heterointerface Structures (Adv. Mater. Technol. 12/2022)
Source abstract
Abstract
Heterointerface Structures In article number 2201028, Hyung Joong Yun, Hocheon Yoo, and co-workers present negative differential resistive behavior resulting from electron tunneling at the zinc oxide nanoparticle/silicon heterointerface. The principle of negative differential resistive behaviors is elucidated through a comprehensive study, including an analysis of the energy band structure, morphological investigation, and electrical characterization.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors · ZnO doping and properties
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Affiliations
Department of Electronic Engineering Gachon University Seongnam Gyeonggi 13120 Republic of Korea
Department of Chemical and Biological Engineering Gachon University Seongnam Gyeonggi 13120 Republic of Korea
Research Center for Materials Analysis Korea Basic Science Institute (KBSI) Daejeon 34133 Republic of Korea
References
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