Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)
Source abstract
Abstract
In article number 1900164 by Abdallah Ougazzaden and co-workers, III-Nitride based LEDs have been locally grown on h-BN and fabricated at a wafer-scale. This enables a simple and a dicing-free pick-and-place of the devices on a flexible substrate without performance degradation.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications
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Affiliations
CNRS UMI 2958, GT‐CNRS, 2 rue Marconi 57070 Metz France
GT Lorraine 2 rue Marconi 57070 Metz France
Institut Lafayette 2 rue Marconi 57070 Metz France
Georgia Institute of Technology School of Electrical and Computer Engineering GT‐Lorraine 57070 Metz France
References
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