X‐Ray Detectors: Sensitive and Fast Direct Conversion X‐Ray Detectors Based on Single‐Crystalline HgI2 Photoconductor and ZnO Nanowire Vacuum Diode (Adv. Mater. Technol. 5/2020)
Source abstract
Abstract
In article number 1901108, Feng Huang, Jun Chen, and co-workers design a direct conversion X-ray detector based on a HgI2 crystal and a ZnO nanowire vacuum diode to overcome the current runaway effect at high operating electric field and improve the detection sensitivity. The detector shows a sensitivity of 6.8 × 103 μCGyair−1 cm−2 and a response time of 0.24 ms. The proposed X-ray detector is promising for the application of low dose X-ray detection.
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials
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Affiliations
State Key Laboratory of Optoelectronic Materials and Technologies Guangdong Province Key Laboratory of Display Material and Technology School of Electronics and Information Technology Sun Yat‐sen University Guangzhou 510275 P. R. China
State Key Laboratory of Optoelectronic Materials and Technologies School of Materials Sun Yat‐Sen University Guangzhou 510275 P. R. China
References
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