Polyoxometalates‐Graphene Oxide: Controlled Nonvolatile Transition in Polyoxometalates‐Graphene Oxide Hybrid Memristive Devices (Adv. Mater. Technol. 3/2019)
Source abstract
Abstract
In article number 1800551, Ye Zhou, Vellaisamy A. L. Roy, Su-Ting Han, and co-workers demonstrate a transition from write-once-read-many-times to bipolar resistive switching in graphene oxide-based resistance random access memory. A charge trapping/de-trapping mechanism associated with the modulation of the interface barrier between polyoxometalates and graphene oxide is proposed to account for this characteristic.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing
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Affiliations
Shenzhen Key Laboratory of Flexible Memory Materials and Devices College of Electronic Science and Technology Shenzhen University Shenzhen 518060 P. R. China
Institute for Advanced Study Shenzhen University Shenzhen 518060 P. R. China
State Key Laboratory of Terahertz and Millimeter Waves and Department of Materials Science and Engineering City University of Hong Kong Hong Kong 999077 P. R. China
References
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