Optimized Nanosecond Laser Cutting of SiC Wafers: A Simulation‐Driven Approach (Adv. Mater. Technol. 14/2025)
Source abstract
Abstract
SiC Wafers In article number 2401652, Yu-Lung Lo and Dileep Karnam demonstrate the successful integration of simulation modeling and artificial neural networks to optimize nanosecond laser machining of SiC. The model accurately predicts key outputs with minimal data, reducing reliance on trial-and-error. Optimal cuts are achieved with high power and low speed, producing high aspect ratios and smooth surfaces. Plasma spectroscopy and energy-dispersive X-ray spectroscopy confirm the formation of easily removable SiC redeposits in the HAZ.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Laser Material Processing Techniques · Advanced Machining and Optimization Techniques
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Affiliations
Department of Mechanical Engineering National Cheng Kung University Tainan 701 Taiwan
References
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