Micro‐LEDs: Heterogeneous Integration of Microscale GaN Light‐Emitting Diodes and Their Electrical, Optical, and Thermal Characteristics on Flexible Substrates (Adv. Mater. Technol. 1/2018)
Source abstract
Abstract
A simplified process to form released thin-film, microscale GaN based blue light-emitting diodes (LEDs) from patterned sapphire is described by Xing Sheng and co-workers in article number 1700239. These micro-LEDs are transferred onto copper and polyimide based flexible needle substrates, and their electrical, optical, and thermal characteristics are investigated. Integrated with phosphors, flexible polychromic light emitter arrays are demonstrated.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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Affiliations
Department of Electronic Engineering Tsinghua National Laboratory for Information Science and Technology (TNList) Tsinghua University Beijing 100084 China
Department of Physics Tsinghua University Beijing 100084 China
Xi'an Zoomview Optoelectronics Science and Technology Co., LTD Xian 710065 China
FLIR Systems (Shanghai) Co., LTD. Beijing Branch Beijing 100004 China
Institute of Laser Engineering Beijing University of Technology Beijing 100124 China
School of Materials Science and Engineering Tsinghua University Beijing 100084 China
References
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