Dynamic Switching and Energy Storage Unified by Electrochemical Ion Intercalation
Source abstract
Abstract
Abstract Ion‐intercalation compounds with transport pathways for guest ions find their prevalent applications in energy storage devices. Along with the ion intercalation, chemical transformations of the host material are involved, resulting in the change of the electronic structure. Electronic conductance, therefore, depends on the number of ions intercalated into the host material, leading to the development of new switching devices that use different electronic conductance states to store and process information. Although energy storage and dynamic switching devices are often regarded as completely different, the unified working mechanism based on ion intercalation opens up the possibility of integrating both devices and using them in a coordinated way. In this perspective, the materials and device designs of dynamic switching devices based on ion intercalation are briefly introduced and an unexplored avenue to project dynamic switching behaviors to the operation status of batteries with synergistic time and length scales is proposed.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Conducting polymers and applications · Advanced Memory and Neural Computing · Advanced Battery Materials and Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Materials, Architectures and Integration of Nanomembranes (MAIN) Chemnitz University of Technology 09126 Chemnitz Germany
Material Systems for Nanoelectronics Chemnitz University of Technology 09107 Chemnitz Germany
School of Science Dresden University of Technology Dresden Germany
Funding
Deutsche Forschungsgemeinschaft · European Research Council
References (72)
Show source-provided references
1. 10.1021/ja309143810.1021/ja3091438 ↗
2. 10.1038/d41586-019-02965-y10.1038/d41586-019-02965-y ↗
3. 10.1126/science.205.4407.65110.1126/science.205.4407.651 ↗
4. 10.1103/PhysRevB.56.135410.1103/PhysRevB.56.1354 ↗
5. Pierret R. F. · 1996
6. 10.1038/530144a10.1038/530144a ↗
7. 10.1038/s41928-017-0006-810.1038/s41928-017-0006-8 ↗
8. 10.1038/s41578-019-0159-310.1038/s41578-019-0159-3 ↗
9. 10.1147/rd.524.048110.1147/rd.524.0481 ↗
10. 10.1021/acsami.7b0077810.1021/acsami.7b00778 ↗
11. 10.1063/1.503396710.1063/1.5033967 ↗
12. 10.1021/acsami.7b0352710.1021/acsami.7b03527 ↗
13. 10.1021/nn100483a10.1021/nn100483a ↗
14. 10.1002/adma.20110410410.1002/adma.201104104 ↗
15. 10.1038/ncomms173710.1038/ncomms1737 ↗
16. 10.1038/nmat330710.1038/nmat3307 ↗
17. 10.1021/acs.nanolett.5b0090110.1021/acs.nanolett.5b00901 ↗
18. 10.1021/acsnano.7b0078310.1021/acsnano.7b00783 ↗
19. 10.1002/admt.20190003710.1002/admt.201900037 ↗
20. 10.1002/adma.20180235310.1002/adma.201802353 ↗
21. 10.1002/adfm.20190282110.1002/adfm.201902821 ↗
22. 10.1021/acsami.9b1433810.1021/acsami.9b14338 ↗
23. 10.1002/adma.20160431010.1002/adma.201604310 ↗
24. 10.1038/s41467-018-07565-410.1038/s41467-018-07565-4 ↗
25. 10.1038/s41578-021-00314-y10.1038/s41578-021-00314-y ↗
26. 10.1038/s41578-020-00261-010.1038/s41578-020-00261-0 ↗
27. 10.1021/ja00330a07010.1021/ja00330a070 ↗
28. 10.1016/j.ssi.2014.05.01110.1016/j.ssi.2014.05.011 ↗
29. 10.1146/annurev-matsci-070317-12452510.1146/annurev-matsci-070317-124525 ↗
30. 10.1147/JRD.2019.294228510.1147/JRD.2019.2942285 ↗
31. 10.1016/j.mseb.2004.05.04510.1016/j.mseb.2004.05.045 ↗
32. 10.1002/adfm.20180417010.1002/adfm.201804170 ↗
33. 10.1002/adma.20180154810.1002/adma.201801548 ↗
34. 10.1016/j.nanoen.2011.08.00510.1016/j.nanoen.2011.08.005 ↗
35. 10.1063/1.192907910.1063/1.1929079 ↗
36. 10.1039/C7TC03896H10.1039/C7TC03896H ↗
37. 10.1063/1.482217310.1063/1.4822173 ↗
38. 10.1002/adma.20160110910.1002/adma.201601109 ↗
39. Tang J. · 2018
40. 10.1038/nmat485610.1038/nmat4856 ↗
41. 10.1038/natrevmats.2017.8610.1038/natrevmats.2017.86 ↗
42. 10.1038/s41563-020-0703-y10.1038/s41563-020-0703-y ↗
43. 10.1201/b1031810.1201/b10318 ↗
44. 10.1039/c0py00077a10.1039/c0py00077a ↗
45. 10.1002/polb.2433110.1002/polb.24331 ↗
46. 10.1002/adfm.20060123910.1002/adfm.200601239 ↗
47. 10.1002/polb.2403810.1002/polb.24038 ↗
48. 10.1063/1.271500210.1063/1.2715002 ↗
49. 10.1002/aelm.20170004610.1002/aelm.201700046 ↗
50. 10.1016/j.mee.2016.10.00710.1016/j.mee.2016.10.007 ↗
51. 10.1002/pssr.20180032010.1002/pssr.201800320 ↗
52. 10.1038/s41598-019-41508-310.1038/s41598-019-41508-3 ↗
53. 10.1002/adfm.20160068010.1002/adfm.201600680 ↗
54. 10.1038/nmat307010.1038/nmat3070 ↗
55. Y.‐B.Kim S. R.Lee D.Lee C. B.Lee M.Chang J. H.Hur M.‐J.Lee G.‐S.Park C. J.Kim U.‐I.Chung inIEEE Digest Technical Papers – VLSI Technology Kyoto 2011.
56. 10.1038/srep2852510.1038/srep28525 ↗
57. Lee H. · 2010
58. 10.1109/TED.2011.214779110.1109/TED.2011.2147791 ↗
59. 10.1038/s41928-018-0021-410.1038/s41928-018-0021-4 ↗
60. 10.1039/D0CP04098C10.1039/D0CP04098C ↗
61. 10.1021/acsami.0c0464010.1021/acsami.0c04640 ↗
62. 10.1016/j.carbon.2019.01.03810.1016/j.carbon.2019.01.038 ↗
63. 10.1021/acssuschemeng.8b0632810.1021/acssuschemeng.8b06328 ↗
64. 10.1039/a900016j10.1039/a900016j ↗
65. 10.1021/jp013328310.1021/jp0133283 ↗
66. 10.1038/s41586-018-0015-410.1038/s41586-018-0015-4 ↗
67. 10.1016/j.rser.2019.10925410.1016/j.rser.2019.109254 ↗
68. 10.1038/s41377-018-0040-y10.1038/s41377-018-0040-y ↗
69. 10.1038/s41560-020-0665-y10.1038/s41560-020-0665-y ↗
70. 10.1038/s41467-022-28267-y10.1038/s41467-022-28267-y ↗
71. 10.1038/d41586-021-00021-210.1038/d41586-021-00021-2 ↗
72. 10.1002/aenm.20210364110.1002/aenm.202103641 ↗