Rapid thermal annealing effect of (Ba,Sr)TiO₃thin films

Abstract This paper describes the effect of rapid thermal annealing on the electrical properties of (Ba0.5Sr0.5)TiO3 (BST) thin films. BST thin films were grown by rf magnetron sputtering method with rapid thermal annealing (RTA) at various kinds of temperature. When BST thin films were deposited directly on boron doped Si(100) (P-type) substrate, silicon diffused oxide interlayers were formed between BST and P-type Si(100) depending on RTA temperature. Dielectric constant of BST thin film was improved by using RTA method and maximum value (∼100) was obtained at 700°C.