Electrically Tunable Integrated Thin‐Film Magnetoelectric Resonators
Source abstract
Abstract
Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. Here, this natural next step is pursued and thin‐film integrated magnetoelectric devices are produced for radio‐frequency (RF) electronics. The first fully integrated, thin‐film magnetoelectric modulators for tunable RF electronics are presented. These devices provide electric field control of magnetic permeability in order to change the phase velocity and resonance frequency of coplanar waveguides. Over the course of this study, the various thin‐film material phenomena, trade‐offs, and integration considerations for composite magnetoelectrics are analyzed and discussed. The fabricated devices achieve reversible tunability of the resonance frequency, characterized by a remarkable converse magnetoelectric coupling coefficient of up to 24 mG cm V−1 using just thin films. Based on this work, suggestions are given for additional optimizations of future designs that will maximize the thin‐film magnetoelectric interactions.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Advanced Condensed Matter Physics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Electrical Engineering Stanford University Stanford CA 94305 USA
Radiant Technologies, Inc. Albuquerque NM 87107 USA
Stanford Synchrotron Radiation Laboratory SLAC Menlo Park CA 94025 USA
Materials Science and Engineering Stanford University Stanford CA 94305 USA
Funding
U.S. Department of Defense · Air Force Office of Scientific Research
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