Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology

Abstract 4H‐SiC is a key enabler for realizing integrated electronics operating in harsh environments, which exhibit very high temperatures. Through advances in 4H‐SiC process technology, different sensor and circuit types have been demonstrated to operate stable at temperatures as high as 800 °C, paving the way toward harsh‐environment immune smart sensors. In this work, for the first time the operation of ion‐implanted 4H‐SiC Hall sensors realized in a wafer scale Bipolar‐CMOS‐DMOS technology is demonstrated at a wide operation temperature range spanning room temperature up to 500 °C in addition to short‐term operation up to 600 °C. The temperature‐dependent sensor characteristics of 15–22 samples are evaluated in terms of sensitivity and noise. The small inter‐device variations reflect the stability of the used process for very high temperature Hall sensors. The noise‐limited detectivity is further evaluated, revealing a best value of 950 nT/ and a mean detectivity of 1 µT/ at 500 °C. This is the best value reported up to date for very high temperature Hall sensors, besides being the first demonstration of ion‐implanted wide‐bandgap Hall sensors. Overall, the results reflect the potential of the demonstrated Hall sensors for the next generation of integrated magnetic field sensors in harsh environments.