journal article·2023-01

Gaseous Catalyst Assisted Growth of Graphene on Silicon Carbide for Quantum Hall Resistance Standard Device

Lingxiu Chen, HuiShan Wang, Ziqiang Kong, Changwei Zhai, Xiujun Wang, Yibo Wang, Zhengtai Liu, Chengxin Jiang, Chen Chen, Dawei Shen, Xipin Chen, Yuxuan Zhu, Wenzhong Bao, Zhenyu Yang, Yunfeng Lu, Haomin Wang

Advanced Materials Technologies· Volume 8· Issue 2
Publisher page

Abstract

Abstract Direct growth of graphene on silicon carbide (SiC) is a very promising method for preparing high‐quality graphene. However, high quality single crystal epitaxial graphene films on SiC always form at a temperature higher than 1800 °C. Here, the synthesis of graphene on the silicon surface (0001) of SiC at ≈1300 °C by gaseous catalyst‐assisted chemical vapor deposition (CVD) method is reported. As the step height of terraces on SiC surface can influence the performance of graphene Hall devices, low‐temperature growth of graphene benefits for keeping the steps of the SiC surface at a small height, which can be achieved by a pre‐treatment before growth. A graphene quantum Hall resistance standard (G‐QHRS) device fabricated on the SiC surface with a small step height of ≈0.5 nm exhibits an accuracy of 1.15 × 10−8 and a reproducibility of 3.6 × 10−9 within 7 days in the measurement of quantum resistance at B = 6 T and T = 4.5 K. The gaseous catalyst‐assisted CVD on SiC is an effective scalable growth approach that produces high‐quality graphene for the resistance metrology, and it represents a promising step toward a low magnetic field QHRS setting the basis of low‐cost and transportable QHRS in a near future.
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Research context

OpenAlex topics: Graphene research and applications · Quantum and electron transport phenomena · Magnetic Field Sensors Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

School of Materials Science and Physics China University of Mining and Technology Xuzhou 221116 China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

National Institute of Metrology Beijing 100029 China

Key Laboratory of Electrical Quantum Standards for State Market Regulation Beijing 100029 China

School of Physical Science and Technology ShanghaiTech University Shanghai 201210 China

International Department the Affiliated High School of South China Normal University Guangzhou 510630 China

State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

Funding

National Natural Science Foundation of China · Science and Technology Commission of Shanghai Municipality · China Postdoctoral Science Foundation · ShanghaiTech University

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