journal article·2017-11

Racemic Effect on the Performance of Organic Multilevel Memory: Beyond Molecular Design

Xue‐Feng Cheng, Shu‐Gang Xia, Xiang Hou, Xin Xiao, Jing‐Hui He, Zhi‐Gang Ren, Qing‐Feng Xu, Hua Li, Na‐Jun Li, Dong‐Yun Chen, Jian‐Mei Lu

Advanced Materials Technologies· Volume 2· Issue 11
Publisher page

Abstract

Abstract Improving organic devices via molecular design is challenging and difficult to rationalize because individual molecular properties always convolute with intermolecular interaction and crystallinity to contribute the device performance. In this work, it is demonstrated for the first time that racemic effect can be utilized to effectively improve memory device performance. A pair of enantiomers and their mixture are used to prepare organic multilevel resistive random access memory (RRAM) devices. The RRAM devices fabricated from the equimolar mixture of enantiomers are of the lowest onset voltages and highest ternary device yield, independent of the preparation methods. Structural analysis of the powder, film, and single crystal of the equimolar mixture reveals formation of a real racemic compound, where π–π stacking in contrast to the only C–H–π interaction in the film of pure enantiomers appears. Since individual enantiomer has identical electronic properties, the discrepancy in device performance is attributed to the different intermolecular interactions.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Organic Electronics and Photovoltaics · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Chemistry Chemical Engineering and Materials Science Collaborative Innovation Center of Suzhou Nano Science and Technology National United Engineering Laboratory of Functionalized Environmental Adsorption Materials Soochow University Suzhou 215123 P. R. China

Funding

National Natural Science Foundation of China

References (32)

Show source-provided references
1. 10.1038/nmat169910.1038/nmat1699 ↗
2. 10.1038/2595410.1038/25954 ↗
3. 10.1021/cr900182s10.1021/cr900182s ↗
4. 10.1021/ja910243f10.1021/ja910243f ↗
5. 10.1016/S0925-4005(00)00541-410.1016/S0925-4005(00)00541-4 ↗
6. 10.1038/nchem.142210.1038/nchem.1422 ↗
7. 10.1021/ar500074310.1021/ar5000743 ↗
8. 10.1021/ja207364310.1021/ja2073643 ↗
9. 10.1038/nnano.2012.23810.1038/nnano.2012.238 ↗
10. 10.1002/adma.20060256410.1002/adma.200602564 ↗
11. 10.1002/adfm.20150349310.1002/adfm.201503493 ↗
12. 10.1016/j.orgel.2015.10.02410.1016/j.orgel.2015.10.024 ↗
13. 10.1002/asia.20150144110.1002/asia.201501441 ↗
14. 10.1002/adma.20120231910.1002/adma.201202319 ↗
15. 10.1039/C5TC02274F10.1039/C5TC02274F ↗
16. 10.1039/C4TC01160K10.1039/C4TC01160K ↗
17. 10.1039/C5TC02014J10.1039/C5TC02014J ↗
18. 10.1038/nature0207010.1038/nature02070 ↗
19. 10.1002/aelm.20150047410.1002/aelm.201500474 ↗
20. 10.1016/j.progpolymsci.2008.08.00110.1016/j.progpolymsci.2008.08.001 ↗
21. 10.1038/srep2676310.1038/srep26763 ↗
22. 10.1002/adma.20130263710.1002/adma.201302637 ↗
23. 10.1063/1.168082810.1063/1.1680828 ↗
24. 10.1063/1.32206310.1063/1.322063 ↗
25. 10.1039/C6SC03986C10.1039/C6SC03986C ↗
26. 10.1002/asia.20160131710.1002/asia.201601317 ↗
27. 10.1103/PhysRev.103.164810.1103/PhysRev.103.1648 ↗
28. 10.1002/anie.20050436510.1002/anie.200504365 ↗
29. 10.1002/1522-2675(200209)85:9<2946::AID-HLCA2946>3.0.CO;2-110.1002/1522-2675(200209)85:9<2946::AID-HLCA2946>3.0.CO;2-1 ↗
30. 10.1557/JMR.1994.148410.1557/JMR.1994.1484 ↗
31. 10.1038/nmat257010.1038/nmat2570 ↗
32. 10.1039/c2py20472j10.1039/c2py20472j ↗