journal article·2018-05

Deterministic and Etching‐Free Transfer of Large‐Scale 2D Layered Materials for Constructing Interlayer Coupled van der Waals Heterostructures

Li Tao, Hao Li, Yun Gao, Zefeng Chen, Lei Wang, Ya Deng, Jian Zhang, Jian‐Bin Xu

Advanced Materials Technologies· Volume 3· Issue 5
Publisher page

Abstract

Abstract Transfer of large‐scale 2D atomic layers onto desired targets is crucial for the integration toward practical applications. Conventional wet etching transfer of 2D materials grown on insulating substrates suffers from the degraded film quality caused by the prolonged exposure of harsh chemicals. Also, both the detaching from initial substrate and the attaching to target processes are not spatially deterministic. Herein, by adopting the water‐soluble polyvinyl alcohol as a viscoelastic mediator and polymethyl‐methacrylate as a protecting layer, a green and robust transfer technique is developed for various grown 2D materials. This method is of high degree of freedom, which can realize both selective peel‐off and aligned release. The transferred materials maintain their pristine qualities, as probed by various spectroscopic/microscopic characterizations. This technique promises a universal applicability for a diverse range of 2D materials and growth/target substrates, facilitating facile fabrication of 2D electronic devices with improved performance. Furthermore, by performing restacking steps, van der Waals heterostructures can be built. As a proof of concept, the artificial assembly of monolayer MoS2/WSe2 heterostructure is fabricated, and the strong interlayer coupling from photoluminescence quenching and emerging Raman modes at the junction areas is found, indicating that the method guarantees the ideal interfaces between the transferred materials.
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Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electronic Engineering and Materials Science and Technology Research Center The Chinese University of Hong Kong Shatin, N.T. Hong Kong SAR P. R. China

Department of Applied Physics School of Physical and Mathematical Sciences Nanjing Tech University Nanjing 211816 P. R. China

CAS Key Laboratory of Nanosystem and Hierarchical Fabrication Nanofabrication Laboratory CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190 P. R. China

Funding

Research Grants Council, University Grants Committee · National Natural Science Foundation of China

References (49)

Show source-provided references
1. 10.1039/C4NR03435J10.1039/C4NR03435J ↗
2. 10.1063/1.498364610.1063/1.4983646 ↗
3. 10.1021/acsphotonics.6b0007910.1021/acsphotonics.6b00079 ↗
4. 10.1002/admt.20170000510.1002/admt.201700005 ↗
5. 10.1038/s41699-017-0016-410.1038/s41699-017-0016-4 ↗
6. 10.1038/nnano.2010.17210.1038/nnano.2010.172 ↗
7. 10.1038/nmat420510.1038/nmat4205 ↗
8. 10.1088/2053-1583/1/1/01100210.1088/2053-1583/1/1/011002 ↗
9. 10.1063/1.366540510.1063/1.3665405 ↗
10. 10.1016/j.apmt.2015.09.00110.1016/j.apmt.2015.09.001 ↗
11. 10.1021/acsami.7b0042010.1021/acsami.7b00420 ↗
12. 10.1021/nn504229z10.1021/nn504229z ↗
13. 10.1021/nn501779y10.1021/nn501779y ↗
14. 10.1021/nn505767310.1021/nn5057673 ↗
15. 10.1002/adma.20160392810.1002/adma.201603928 ↗
16. 10.1063/1.493494110.1063/1.4934941 ↗
17. 10.1039/C7NR01755C10.1039/C7NR01755C ↗
18. 10.1007/s12274-015-0866-z10.1007/s12274-015-0866-z ↗
19. 10.1021/acsnano.5b0152910.1021/acsnano.5b01529 ↗
20. 10.1063/1.493023410.1063/1.4930234 ↗
21. 10.1038/srep1859610.1038/srep18596 ↗
22. 10.1021/acsami.6b0489610.1021/acsami.6b04896 ↗
23. 10.1021/acsnano.6b0096110.1021/acsnano.6b00961 ↗
24. 10.1038/srep1787710.1038/srep17877 ↗
25. 10.1021/nl400687n10.1021/nl400687n ↗
26. 10.1039/C5NR06770G10.1039/C5NR06770G ↗
27. 10.1002/admt.20160000110.1002/admt.201600001 ↗
28. 10.1021/jp312075v10.1021/jp312075v ↗
29. 10.1002/adfm.20110211110.1002/adfm.201102111 ↗
30. 10.1103/PhysRevB.91.19541110.1103/PhysRevB.91.195411 ↗
31. 10.1038/nphoton.2015.2310.1038/nphoton.2015.23 ↗
32. 10.1364/OL.42.00195010.1364/OL.42.001950 ↗
33. 10.1021/acs.nanolett.5b0479110.1021/acs.nanolett.5b04791 ↗
34. 10.1021/acsnano.6b0148610.1021/acsnano.6b01486 ↗
35. 10.1039/c3nr03052k10.1039/c3nr03052k ↗
36. 10.1103/PhysRevB.88.19531310.1103/PhysRevB.88.195313 ↗
37. 10.1021/nl403036h10.1021/nl403036h ↗
38. 10.1103/PhysRevB.85.16140310.1103/PhysRevB.85.161403 ↗
39. 10.1038/nnano.2014.16710.1038/nnano.2014.167 ↗
40. 10.1073/pnas.140543511110.1073/pnas.1405435111 ↗
41. 10.1088/2053-1583/3/2/02502010.1088/2053-1583/3/2/025020 ↗
42. 10.1103/PhysRevB.84.15541310.1103/PhysRevB.84.155413 ↗
43. 10.1039/C4CS00282B10.1039/C4CS00282B ↗
44. 10.1021/acsami.6b0028510.1021/acsami.6b00285 ↗
45. 10.1021/acs.nanolett.5b0329110.1021/acs.nanolett.5b03291 ↗
46. 10.1038/ncomms724210.1038/ncomms7242 ↗
47. 10.1088/2053-1583/aa735210.1088/2053-1583/aa7352 ↗
48. 10.1103/PhysRevB.88.08531810.1103/PhysRevB.88.085318 ↗
49. 10.1021/nl503817710.1021/nl5038177 ↗