Heterogeneous Integration of Microscale GaN Light‐Emitting Diodes and Their Electrical, Optical, and Thermal Characteristics on Flexible Substrates
Source abstract
Abstract
Abstract Materials and device strategies to form inorganic, thin‐film, microscale light‐emitting diodes (micro‐LEDs) are presented based on a simplified release method. High performance gallium nitride based blue micro‐LEDs are fabricated on and released from both patterned sapphire substrates (PSSs) and conventional nonpatterned sapphire substrates (CSSs). Micro‐LEDs are transferred onto copper and polyimide based flexible substrates and their electrical and optical performances are maintained. Thermal properties of PSS and CSS based micro‐LEDs are systematically explored on different substrates. Finally, micro‐LEDs combined with phosphor coatings demonstrate capability for polychromatic emission. The techniques presented here provide promising paths to advanced light sources with potential applications in lighting, displays, and biomedicine.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Advanced Sensor and Energy Harvesting Materials · Photoreceptor and optogenetics research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic Engineering Tsinghua National Laboratory for Information Science and Technology (TNList) Tsinghua University Beijing 100084 China
Department of Physics Tsinghua University Beijing 100084 China
Xi'an Zoomview Optoelectronics Science and Technology Co., LTD Xian 710065 China
FLIR Systems (Shanghai) Co., LTD. Beijing Branch Beijing 100004 China
Institute of Laser Engineering Beijing University of Technology Beijing 100124 China
School of Materials Science and Engineering Tsinghua University Beijing 100084 China
Funding
National Natural Science Foundation of China
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