Four Degrees‐of‐Freedom Direct Writing of Liquid Metal Patterns on Uneven Surfaces
Source abstract
Abstract
Abstract A novel direct writing of eutectic gallium indium (EGaIn) patterns on uneven surfaces including both inclined and curved substrates is reported. The approach relies on four degrees‐of‐freedom motion control of the pressurized EGaIn dispenser and precise sensing of the dispenser tip–substrate distance. An experimental hardware is built by using three motorized linear stages, a motorized rotation stage, two electronic pressure regulators, and a laser distance sensor and operating programs are developed. While the rotation stage makes the laser sensor always precede the dispenser tip by a predetermined value, the vertical stage maintains the dispenser tip–substrate distance by using the readout of the laser sensor recorded beforehand. By incorporating the time delay from the laser sensor preceding the dispenser tip for feedback control of the dispenser tip position, various EGaIn patterns are directly written on uneven substrates with their widths being 70–80 µm. Electrical connectivity and structural integrity of written EGaIn patterns are confirmed by the light‐emitting diode mounted between two end segments of EGaIn patterns. The maximum slope for reliable patterning is found to be ≈20°. To show practical applications of this new concept, a curved keypad and a glove‐type wearable device with strain sensors integrated are demonstrated.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Advanced Materials and Mechanics · Adhesion, Friction, and Surface Interactions
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Mechanical and Aerospace Engineering Seoul National University 1 Gwanak‐ro Gwanak‐gu Seoul 08826 Korea
Department of Mechanical Engineering Korea Advanced Institute of Science and Technology 291 Daehak‐ro Yuseong‐gu Daejeon 34141 Korea
Funding
National Research Foundation of Korea · Ministry of Science, ICT and Future Planning · Ministry of Education
References (46)
Show source-provided references
1. 10.1109/JSEN.2015.244930410.1109/JSEN.2015.2449304 ↗
2. 10.1177/027836491454379310.1177/0278364914543793 ↗
3. 10.1039/c2lc40628d10.1039/c2lc40628d ↗
4. 10.1088/0964-1726/20/10/10501710.1088/0964-1726/20/10/105017 ↗
5. 10.1002/aelm.20170043410.1002/aelm.201700434 ↗
6. 10.1002/adma.20170693710.1002/adma.201706937 ↗
7. 10.1002/adfm.20160563010.1002/adfm.201605630 ↗
8. 10.1073/pnas.161637711410.1073/pnas.1616377114 ↗
9. 10.1088/0960-1317/20/12/12502910.1088/0960-1317/20/12/125029 ↗
10. 10.1002/adfm.20090060410.1002/adfm.200900604 ↗
11. 10.1002/adma.20120392110.1002/adma.201203921 ↗
12. 10.1002/adma.20140258810.1002/adma.201402588 ↗
13. 10.1109/JMEMS.2011.217442110.1109/JMEMS.2011.2174421 ↗
14. 10.1002/adfm.20120358910.1002/adfm.201203589 ↗
15. 10.3390/s14091631110.3390/s140916311 ↗
16. 10.1177/0022034594073009110110.1177/00220345940730091101 ↗
17. 10.1002/adma.20140050210.1002/adma.201400502 ↗
18. 10.1002/adfm.20160446610.1002/adfm.201604466 ↗
19. 10.1002/adma.20170374410.1002/adma.201703744 ↗
20. 10.1002/admi.20170159610.1002/admi.201701596 ↗
21. 10.1021/acsami.6b1308810.1021/acsami.6b13088 ↗
22. 10.1021/acsami.6b0189610.1021/acsami.6b01896 ↗
23. 10.1039/C7TC01918A10.1039/C7TC01918A ↗
24. 10.1039/c3lc50833a10.1039/c3lc50833a ↗
25. 10.1039/c0lc00501k10.1039/c0lc00501k ↗
26. 10.1002/adfm.20120240510.1002/adfm.201202405 ↗
27. 10.1002/adfm.20130373210.1002/adfm.201303732 ↗
28. 10.1039/C7MH00819H10.1039/C7MH00819H ↗
29. 10.1002/adfm.20140304210.1002/adfm.201403042 ↗
30. 10.1021/la401245d10.1021/la401245d ↗
31. 10.1002/adfm.20130322010.1002/adfm.201303220 ↗
32. 10.1039/C6LC00198J10.1039/C6LC00198J ↗
33. 10.1002/adma.20160496510.1002/adma.201604965 ↗
34. 10.1002/admt.20170017310.1002/admt.201700173 ↗
35. 10.1038/srep0841910.1038/srep08419 ↗
36. 10.1002/adma.20130140010.1002/adma.201301400 ↗
37. 10.1038/srep0178610.1038/srep01786 ↗
38. 10.1002/admt.20160004710.1002/admt.201600047 ↗
39. 10.1002/adfm.20180038010.1002/adfm.201800380 ↗
40. 10.1002/adma.20100373410.1002/adma.201003734 ↗
41. 10.1002/adma.20170615710.1002/adma.201706157 ↗
42. K. H.Church P. A.Clark X.Chen M. W.Owens K. M.Stone (nScrypt) US 20100055299 A1 2010.
43. 10.1002/admt.20180006110.1002/admt.201800061 ↗
44. 10.1002/adfm.20140436510.1002/adfm.201404365 ↗
45. 10.1002/adma.20170198510.1002/adma.201701985 ↗
46. 10.1021/acsnano.8b0014710.1021/acsnano.8b00147 ↗