2D MXene Interface Engineered Bismuth Telluride Thermoelectric Module with Improved Efficiency for Waste Heat Recovery
Source abstract
Abstract
Abstract Graphene analog MXenes are the best options for interface engineering traditional thermoelectric materials. For the first time, a composite‐engineered TEG device composed of heavily doped bismuth and antimony telluride with incorporated Ti 3 C 2 T x (MXene) nanoflakes is developed. Incorporated MXenes improved the electrical conductivity by carrier injection and reduces thermal conductivity by interfacial phonon scattering in both composites. The fabricated composite TEG device resulted in a maximum power of 1.14 mW and a power density of 6.1 mWcm −2 . The fabricated composite TEG also demonstrates strong power generation stability and durability. Added MXenes improve the mechanical stability by employing a dispersion‐strengthening mechanism. Conclusively, the developed composite‐engineered TEG device is a facile and efficiency‐improving option for next‐generation bismuth telluride‐based commercial TEG devices.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · MXene and MAX Phase Materials · Thermal properties of materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering City University of Hong Kong Kowloon Tong Hong Kong
Department of Mechanical Engineering The University of Hong Kong Pokfulam Road Hong Kong
School of Science and Technology Hong Kong Metropolitan University Ho Man Tin Hong Kong
James Watt School of Engineering University of Glasgow Glasgow G12 8QQ United Kingdom
Department of Physics Sri Chandrasekharendra Saraswathi Viswa Mahavidyalaya Kanchipuram 631561 India
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