journal article·2020-12

Wafer‐Scale Micro‐LEDs Transferred onto an Adhesive Film for Planar and Flexible Displays

Zhangxu Pan, Chan Guo, Xianchi Wang, Jiucheng Liu, Ruimin Cao, Yanfen Gong, Jiantai Wang, Ningyang Liu, Zhitao Chen, Lihui Wang, Masatoshi Ishikawa, Zheng Gong

Advanced Materials Technologies· Volume 5· Issue 12
Publisher page

Abstract

Abstract The development of micro‐sized light emitting diode (LED) displays has driven the research of micro‐LED mass‐transfer technology. To date, various transfer technologies are proposed, but ample room for improvements in the transfer yield and transfer accuracy still remains. Furthermore, whether these techniques are suited for the subsequent bonding process is not well investigated, which is essential for achieving a good electric connection between micro‐LEDs and driver electronics. Here a systematical solution, termed as “tape‐assisted laser transfer,” which is not only suited for high‐yield micro‐LED transfer but also well compatible with subsequent bonding process, is developed. Using a low‐cost adhesive tape as the support substrate, the method allows fast and wafer‐level transfer of micro‐LED with extremely high yield (≈99.8%) and minimized transfer displacement (<0.5 µm), based on a laser lift‐off (LLO) process. Combined with a shadow mask, the LLO process also allows the selective transfer of micro‐LED to the tape. Such thin film micro‐LEDs are well compatible with the subsequent “bumpless” bonding process using low‐melting point solder. Representative display devices including planar display and deformable display are further developed, suggesting the method has a good potential for developing high‐resolution micro‐LED display panels for the applications in VR/AR, wearables, and smart glasses.
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Research context

OpenAlex topics: Semiconductor Lasers and Optical Devices · Advanced Sensor and Energy Harvesting Materials · Electrowetting and Microfluidic Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Guangdong Institute of Semiconductor Industrial Technology Guangdong Academy of Sciences No. 363 Changxing Road, Tianhe District Guangzhou 510650 China

Department of Information Physics and Computing University of Tokyo Hongo 7‐3‐1, Bunkyo‐ku Tokyo 113‐8656 Japan

Foshan Debao Display Technology Co Ltd. Room 508‐1, Level 5, Block A, Golden Valley Optoelectronics, Nanhai District Foshan 528200 China

Funding

Science and Technology Planning Project of Guangdong Province

References (50)

Show source-provided references
1. 10.1063/1.135152110.1063/1.1351521 ↗
2. 10.1109/LED.2004.82654110.1109/LED.2004.826541 ↗
3. 10.1126/science.117569010.1126/science.1175690 ↗
4. 10.1038/nmat287910.1038/nmat2879 ↗
5. 10.1364/PRJ.5.000A2310.1364/PRJ.5.000A23 ↗
6. 10.1109/TED.2007.90499110.1109/TED.2007.904991 ↗
7. 10.1016/j.nanoen.2011.07.00110.1016/j.nanoen.2011.07.001 ↗
8. 10.1002/smll.20120119510.1002/smll.201201195 ↗
9. 10.1002/adfm.20160600510.1002/adfm.201606005 ↗
10. 10.1016/j.nanoen.2018.11.01710.1016/j.nanoen.2018.11.017 ↗
11. 10.1016/j.nanoen.2017.12.01110.1016/j.nanoen.2017.12.011 ↗
12. 10.1063/1.361567910.1063/1.3615679 ↗
13. 10.1021/acsnano.8b0556810.1021/acsnano.8b05568 ↗
14. 10.1002/aelm.20180061710.1002/aelm.201800617 ↗
15. 10.1109/LPT.2009.201911410.1109/LPT.2009.2019114 ↗
16. 10.1109/JDT.2013.223821510.1109/JDT.2013.2238215 ↗
17. 10.1109/JQE.2018.288887610.1109/JQE.2018.2888876 ↗
18. 10.1088/0022-3727/41/9/09401110.1088/0022-3727/41/9/094011 ↗
19. 10.1088/0022-3727/41/9/09400210.1088/0022-3727/41/9/094002 ↗
20. 10.1109/JPHOT.2012.221218110.1109/JPHOT.2012.2212181 ↗
21. 10.1002/smll.20120038210.1002/smll.201200382 ↗
22. 10.1109/LPT.2012.222169410.1109/LPT.2012.2221694 ↗
23. 10.1002/sdtp.1328610.1002/sdtp.13286 ↗
24. 10.1016/j.ssel.2019.06.00110.1016/j.ssel.2019.06.001 ↗
25. 10.1002/sdtp.1292810.1002/sdtp.12928 ↗
26. 10.1093/nsr/nwz10910.1093/nsr/nwz109 ↗
27. 10.1021/acs.langmuir.6b0188010.1021/acs.langmuir.6b01880 ↗
28. 10.1038/s41598-019-52235-010.1038/s41598-019-52235-0 ↗
29. Keranen K. · 2018 · 1
30. 10.1039/C8SM01996G10.1039/C8SM01996G ↗
31. 10.1126/sciadv.aay512010.1126/sciadv.aay5120 ↗
32. 10.1109/68.30016910.1109/68.300169 ↗
33. 10.1002/adfm.20120102310.1002/adfm.201201023 ↗
34. 10.1073/pnas.100582810710.1073/pnas.1005828107 ↗
35. 10.1038/nmat153210.1038/nmat1532 ↗
36. 10.1002/advs.20170025110.1002/advs.201700251 ↗
37. 10.1126/science.106915310.1126/science.1069153 ↗
38. 10.1002/adma.20080186410.1002/adma.200801864 ↗
39. 10.1073/pnas.110265010810.1073/pnas.1102650108 ↗
40. 10.1016/j.jmapro.2012.09.01410.1016/j.jmapro.2012.09.014 ↗
41. 10.1063/1.170486210.1063/1.1704862 ↗
42. Patent WO2012142177A2 2012.
43. Lim D. F. · 2010 · 136410.1109/ECTC.2010.5490639 ↗
44. 10.1149/1.298286110.1149/1.2982861 ↗
45. 10.4186/ej.2017.21.1.24510.4186/ej.2017.21.1.245 ↗
46. 10.1063/1.327615610.1063/1.3276156 ↗
47. Banerjee K. · 1997 · 11510.1109/IEDM.1997.649477 ↗
48. 10.1021/ph500133w10.1021/ph500133w ↗
49. Ezhilarasu G. · 2019 · 147010.1109/ECTC.2019.00226 ↗
50. 10.1088/0268-1242/27/1/01500310.1088/0268-1242/27/1/015003 ↗