DataVXAdvanced Materials InterfacesPaper
journal article·2025-03Open access

Single‐Crystal and Polycrystal SiC Bonding for Cost‐effective Chip Fabrication (Adv. Mater. Interfaces 6/2025)

Szuyu Huang, Fachen Liu, Jiaxin Liu, Xiaoyue Gao, Zhenzhong Wang, Peng Gao

Advanced Materials Interfaces· Volume 12· Issue 6
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Source abstract

Abstract

Bonding Single-Crystal and Polycrystalline Silicon Carbide To reduce the cost of silicon carbide chips, in article 2400816, Zhenzhong Wang, Peng Gao, and co-workers employ the ion beam etching (IBE) method to activate the surfaces of single-crystal silicon carbide and polycrystalline silicon carbide, directly bonding this system. This method not only effectively reduces silicon oxide formation, thereby preserving thermal conductivity, but also achieves the bonding energy necessary to withstand the manufacturing process when combined with annealing.
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Research context

Materials processing

OpenAlex topics: Advanced ceramic materials synthesis · Additive Manufacturing and 3D Printing Technologies · Aluminum Alloys Composites Properties

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Affiliations

International Center for Quantum Materials School of Physics Peking University Beijing 100871 China

Electron Microscopy Laboratory School of Physics Peking University Beijing 100871 China

Materials Academy JITRI (Suzhou) Jiangsu 215100 China

Tsientang Institute for Advanced Study Zhejiang 310024 China

Interdisciplinary Institute of Light‐Element Quantum Materials and Research Center for Light‐Element Advanced Materials Peking University Beijing 100871 China

Hefei National Laboratory Hefei 230088 China

References

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