DataVXAdvanced Materials InterfacesPaper
journal article·2025-01Open access

Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method (Adv. Mater. Interfaces 2/2025)

Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Palvan Seyidov, Saud Bin Anooz, Roberts Blukis, Jana Rehm, Kornelius Tetzner, Mike Pietsch, Andrea Dittmar, Steffen Ganschow, Arub Akhtar, Thilo Remmele, Martin Albrecht, Tobias Schulz, Ta‐Shun Chou, Albert Kwasniewski, Manuela Suendermann, Thomas Schroeder, Matthias Bickermann

Advanced Materials Interfaces· Volume 12· Issue 2
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Source abstract

Abstract

Czochralski Method High-angle annular dark-field scanning transmission electron microscopy image of a β-(Al0.2Ga0.8)2O3 crystal along the [010] projection grown by the Czochralski method. More details can be found in article 2400122 by Zbigniew Galazka and co-workers.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Ga2O3 and related materials · Semiconductor materials and devices · ZnO doping and properties

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Affiliations

Leibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin Germany

Ferdinand‐Braun‐Institut Leibniz‐Institut für Höchstfrequenztechnik Gustav‐Kirchhoff‐Straße 4 12489 Berlin Germany

Humboldt‐Universität zu Berlin Institut für Physik Newtonstr. 15 12489 Berlin Germany

Technische Universität Berlin Institut für Chemie Straße des 17. Juni 115 10623 Berlin Germany

References

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