Contents: (Adv. Mater. Interfaces 14/2017)
Source abstract
Abstract
Ultrathin Cs 3 Bi 2 I 9 Nanosheets as an Electronic Memory Material for Flexible Memristors Few-layered Cs 3 Bi 2 I 9 and MA 3 Bi 2 I 9 with high quality are fabricated by a recrystallization method.Their potential applications for flexible resistive switching memories are explored.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References
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