DataVXAdvanced Materials InterfacesPaper
journal article·2022-02Open access

Band Structure Engineering of WSe2 Homo‐Junction Interfaces via Thickness Control (Adv. Mater. Interfaces 4/2022)

June‐Chul Shin, Yeon Ho Kim, Kenji Watanabe, Takashi Taniguchi, Chul‐Ho Lee, Gwan‐Hyoung Lee

Advanced Materials Interfaces· Volume 9· Issue 4
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Source abstract

Abstract

Band Structure Engineering of WSe2 Homo-Junction Interfaces In article number 2101763, June-Chul Shin, Gwan-Hyoung Lee, and co-workers demonstrate that vertical homo-junction consisting of two WSe2 flakes with different thicknesses shows anti-ambipolar transport behavior due to a thickness-induced band offset at the interface. The anti-ambipolar transport is due to tunneling-mediated interlayer recombination of the majority carriers of electrons in few-layer WSe2 and holes in monolayer WSe2.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films

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Affiliations

Department of Materials Science and Engineering Seoul National University Seoul 08826 Korea

KU‐KIST Graduate School of Converging Science and Technology Korea University Seoul 02841 Korea

Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

Department of Integrative Energy Engineering Korea University Seoul 02841 Korea

Advanced Materials Research Division Korea Institute of Science and Technology Seoul 02792 Korea

Research Institute of Advanced Materials (RIAM) Seoul National University Seoul 08826 Korea

Institute of Engineering Research Seoul National University Seoul 08826 Korea

References

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