Ultrasensitive Photodetector: Edge‐State‐Enhanced Ultrahigh Photoresponsivity of Graphene Nanosheet‐Embedded Carbon Film/Silicon Heterojunction (Adv. Mater. Interfaces 11/2019)
Source abstract
Abstract
Graphene edge states have superior properties for photo-electron trapping. In article number 1802062 by Xi Zhang, Dongfeng Diao, and co-workers, a van de Waals heterojuction is reported with an ultrahigh responsivity of 61.52A W−1 and a high specific detectivity of 3.04 × 1014 Jones. Edge state modulates the Fermi-level and reduces the recombination rate of photo-excited electron-hole pairs.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence
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Affiliations
Institute of Nanosurface Science and Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering Shenzhen University Shenzhen 518060 China
School of Optical and Electronic Information Huazhong University of Science and Technology 1037 Luoyu Road Wuhan Hubei 430074 China
References
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