DataVXAdvanced Materials InterfacesPaper
journal article·2021-05

Giant Positive Magnetoresistance: Bipolar Conduction and Giant Positive Magnetoresistance in Doped Metallic Titanium Oxide Heterostructures (Adv. Mater. Interfaces 9/2021)

Ke Huang, Tao Wang, Mengjia Jin, Liang Wu, Junyao Floria Wang, Shengyao Li, Dong‐Chen Qi, Shuying Cheng, Yangyang Li, Jingsheng Chen, Xiaozhong He, Changjian Li, Stephen J. Pennycook, Xiao Renshaw Wang

Advanced Materials Interfaces· Volume 8· Issue 9
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Source abstract

Abstract

In article number 2002147, Xiao Renshaw Wang and co-workers demonstrate that the emergent high-mobility bipolar transport and giant magnetoresistance (GMR) are achieved through treating titanium film by doping with an ultra-small dopant, i.e. deuterium, and subsequently oxidizing the film. The results of this study pave the way for future electronics.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing

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Affiliations

Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore 637371 Singapore

Institute of Fluid Physics CAEP P. O. Box 919‐106 Mianyang 621900 P. R. China

College of Physics and Information Engineering Institute of Micro‐Nano Devices and Solar Cells Fuzhou University Fuzhou 350108 P. R. China

School of Material Science and Engineering Kunming University of Science and Technology Kunming Yunnan 650093 P. R. China

Hwa Chong Institution (College) Singapore 269734 Singapore

Centre for Materials Science School of Chemistry and Physics Queensland University of Technology Brisbane Queensland 4001 Australia

Department of Materials Science and Engineering National University of Singapore Singapore 117575 Singapore

School of Electrical and Electronic Engineering Nanyang Technological University 50 Nanyang Ave Singapore 639798 Singapore

References

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