DataVXAdvanced Materials InterfacesPaper
journal article·2020-01Open access

Electron Beam Irradiation: Exchange Bias Effect in Epitaxial LaMnO3+δ Film Induced by Electron Beam Irradiation (Adv. Mater. Interfaces 2/2020)

Mingzhu Xue, Shilei Ding, Youfang Lai, Xin Li, Liang Zha, Yuxuan Peng, Zhongyu Liang, Wenyun Yang, Yong Men, Xiangdong Kong, Li Han, Xuegang Chen, Jinbo Yang

Advanced Materials Interfaces· Volume 7· Issue 2
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Source abstract

Abstract

Exchange bias induced by the interfacial coupling of the antiferromagnetic/ferromagnetic heterojunction plays a critical role in spintronic devices. In article number 1901296 by Xuegang Chen, Jinbo Yang and co-workers, an interesting exchange bias effect is reported in the ferromagnetic LaMnO3 films (blue) with antiferromagnetic clusters (red) induced by electron beam irradiation.
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Research context

OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Gas Sensing Nanomaterials and Sensors

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Affiliations

State Key Laboratory for Mesoscopic Physics School of Physics Peking University Beijing 100871 P. R. China

Department of Micro‐nano Fabrication Technology Institute of Electrical Engineering Chinese Academy of Sciences Beijing 100190 P. R. China

School of Materials Engineering Purdue University West Lafayette IN 47906 USA

Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China

Beijing Key Laboratory for Magnetoelectric Materials and Devices Beijing 100871 P. R. China

References

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