Complex Oxides: Quasi‐Single‐Crystalline ZnGa2O4 Films via Solid Phase Epitaxy for Enhancing Deep‐Ultraviolet Photoresponse (Adv. Mater. Interfaces 18/2019)
Source abstract
Abstract
The quasi-single-crystalline ZnGa2O4 deep-ultraviolet (DUV) photodetector is achieved via the solid-phase epitaxy method using the sputtering and rapid-thermal annealing processes. Compared with the nanocrystalline ZnGa2O4 photodetector, the responsivity of quasi-single-crystalline ZnGa2O4 photodetector shows a relative enhancement of 256% at λ = 240 nm. More details can be found in article number 1901075 by Po-Wei Chen, Dong-Sing Wuu, and co-workers.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques · Luminescence Properties of Advanced Materials
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Affiliations
Department of Materials Science and Engineering National Chung Hsing University No. 145, Xingda Rd. Taichung 40227 Taiwan Republic of China
Innovation and Development Center of Sustainable Agriculture Research Center for Sustainable Energy and Nanotechnology National Chung Hsing University No. 145, Xingda Rd. Taichung 40227 Taiwan Republic of China
References
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