DataVXAdvanced Materials InterfacesPaper
journal article·2019-09

Gallium Nitride: Influence of Temperature‐Dependent Substrate Decomposition on Graphene for Separable GaN Growth (Adv. Mater. Interfaces 18/2019)

Jeong‐Hwan Park, Jun‐Yeob Lee, Mun‐Do Park, Jung‐Hong Min, Je‐Sung Lee, Xu Yang, Seokjin Kang, Sang‐Jo Kim, Woo‐Lim Jeong, Hiroshi Amano, Dong‐Seon Lee

Advanced Materials Interfaces· Volume 6· Issue 18
Publisher page
Source abstract

Abstract

The occurrence of graphene loss due to nitrogen, which Jeong-Hwan Park, Hiroshi Amano, Dong-Seon Lee, and co-workers claim to occur in the article number 1900821, generated from GaN decomposition. In the bottom side of the image, graphene loss is occurring by GaN template decomposition while the top side of the image no decomposition and graphene-loss. During the decomposition, nitrogen and carbon escape from the substrate leaving gallium on the surface.
Source: openalex_inverted_index · Quality: baseline

Research context

Nanomaterials

OpenAlex topics: GaN-based semiconductor devices and materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electrical Engineering and Computer Science (EECS) Gwangju Institute of Science and Technology (GIST) Gwangju 61005 Republic of Korea

Institute of Materials and Systems for Sustainability (IMaSS) Nagoya University Nagoya 464‐8603 Japan

School of Materials Science and Engineering (MSE) Gwangju Institute of Science and Technology (GIST) Gwangju 61005 Republic of Korea

References

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