Interlayer Transition: Probing Interfacial Surface State Excitons in Nanoscale Synthesized CuxS/MoS2 Heterostructure (Adv. Mater. Interfaces 6/2019)
Source abstract
Abstract
The image expresses the predefined ultrathin 2D MoS2 and CuxS vertical heterostructure is fabricated by physical vapor sulfurization. The band gap offset causes efficient interlayer charge transfer at the interface. Interlayer transition leads to significant photoluminescence quenching of the heterojunction area rather than intralayer transition within the individual layers. More detail can be found in article number 1801771 by Rauf Shahzad, Jihun Mun, Tae Wan Kim, and Sang-Woo Kang.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · 2D Materials and Applications
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Affiliations
Advanced Instrumentation Institute Korea Research Institute of Standards and Science 267 Gajeong‐ro Yuseong‐gu Daejeon 34113 Republic of Korea
Science of Measurement University of Science and Technology 267 Gajeong‐ro Yuseong‐gu Daejeon 34113 Republic of Korea
References
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