Patterning: N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique (Adv. Mater. Interfaces 5/2015)
Source abstract
Abstract
In article 1400515, D. S. Kumar and co-workers demonstrate a simple technique for the selective placement and patterning of graphene oxide (GO) sheets on N2 plasma treated SiO2/Si substrates by means of the Langmuir–Blodgett technique. This approach enables large-area fabrication of various geometric micropatterns and can provide an excellent platform for utilizing GO for forthcoming smart bio-nanoelectronic applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Materials and Mechanics · Graphene research and applications
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Affiliations
Bio‐Nano Electronics Research Centre Graduate School of Interdisciplinary New Science Toyo University 2100, Kujirai Kawagoe Saitama 350–8585 Japan
References
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