DataVXAdvanced Materials InterfacesPaper
journal article·2021-07Open access

Interface Defect Engineering of MoS2 Monolayer: Interface Defect Engineering of a Large‐Scale CVD‐Grown MoS2 Monolayer via Residual Sodium at the SiO2/Si Substrate (Adv. Mater. Interfaces 14/2021)

Sang Wook Han, Won Seok Yun, Whang Je Woo, Hyungjun Kim, Jusang Park, Young Hun Hwang, Tri Khoa Nguyen, Chinh Tam Le, Yong Soo Kim, Manil Kang, Chang Won Ahn, Soon Cheol Hong

Advanced Materials Interfaces· Volume 8· Issue 14
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Source abstract

Abstract

In article number 2100428, Sang Wook Han, Soon Cheol Hong, and co-workers uncover that the residual Na cations at the SiO2 substrate during a NaCl-assisted chemical vapor deposition-growth process induce the n-type doping into the large-scale supported uniform MoS2 monolayer. Furthermore, the residual Na cations are electrically moved toward the bottom side of the MoS2 monolayer to cure the interfacial sulfur vacancy defects.
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Research context

Materials processing

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Chalcogenide Semiconductor Thin Films

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Affiliations

Department of Physics Basic Science Research Institute and Energy Harvest Storage Research Center University of Ulsan Ulsan 44610 Republic of Korea

Convergence Research Institute DGIST Daegu 42988 Republic of Korea

School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea

Electricity & Electronics and Semiconductor Applications Ulsan College Ulsan 44610 Republic of Korea

Department of Physics Kongju National University Kongju 32588 Republic of Korea

References

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